Inventor · disambiguated record
Seetharaman Sridhar
Also filed as: SRIDHAR SEETHARAMAN
68 granted patents·14 pending applications·426 citations·filing 1999–2023
98Inventor score
Top patents by PatentIndex Score
82 records- 0198US9299830B1Multiple shielding trench gate fetTEXAS INSTRUMENTS INC·Filed 2015·Granted Mar 29, 2016·30 cites·20 claims
- 0296US8748976B1Dual RESURF trench field plate in vertical MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·48 cites·19 claims
- 0396US8067279B2Application of different isolation schemes for logic and embedded memorySADRA KAYVAN·Filed 2009·Granted Nov 29, 2011·113 cites·5 claims
- 0495US9397180B1Low resistance sinker contactTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 19, 2016·14 cites·11 claims
- 0589US9905638B1Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trenchTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 27, 2018·6 cites·20 claims
- 0689US7892931B2Use of a single mask during the formation of a transistor's drain extension and recessed strained epi regionsTEXAS INSTRUMENTS INC·Filed 2006·Granted Feb 22, 2011·19 cites·30 claims
- 0788US7847351B2Lateral metal oxide semiconductor drain extension designTEXAS INSTRUMENTS INC·Filed 2008·Granted Dec 7, 2010·12 cites·22 claims
- 0887US11658241B2Vertical trench gate MOSFET with integrated Schottky diodeTEXAS INSTRUMENTS INC·Filed 2018·Granted May 23, 2023·4 cites·20 claims
- 0987US11322610B2High voltage lateral junction diode deviceTEXAS INSTRUMENTS INC·Filed 2020·Granted May 3, 2022·2 cites·19 claims
- 1087US9196728B2LDMOS CHC reliabilityTEXAS INSTRUMENTS INC·Filed 2014·Granted Nov 24, 2015·7 cites·15 claims
- 1184US9711639B2Multiple shielding trench gate FETTEXAS INSTRUMENTS INC·Filed 2016·Granted Jul 18, 2017·3 cites·10 claims
- 1282US12336299B2Electrostatic discharge guard ring with snapback protectionTEXAS INSTRUMENTS INC·Filed 2023·Granted Jun 17, 2025·0 cites·25 claims
- 1382US9741718B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 22, 2017·3 cites·8 claims
- 1482US7193277B2Application of different isolation schemes for logic and embedded memoryTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 20, 2007·7 cites·3 claims
- 1580US10720499B2Semiconductor device having polysilicon field plate for power MOSFETsTEXAS INSTRUMENTS INC·Filed 2018·Granted Jul 21, 2020·2 cites·18 claims
- 1679US10936000B1Multi-mode high voltage circuitTEXAS INSTRUMENTS INC·Filed 2019·Granted Mar 2, 2021·2 cites·20 claims
- 1779US10256337B2Power transistor with terminal trenches in terminal resurf regionsTEXAS INSTRUMENTS INC·Filed 2017·Granted Apr 9, 2019·2 cites·20 claims
- 1879US6303420B1Integrated bipolar junction transistor for mixed signal circuitsTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 16, 2001·25 cites·16 claims
- 1978US11127852B2Vertical trench gate MOSFET with deep well region for junction terminationTEXAS INSTRUMENTS INC·Filed 2018·Granted Sep 21, 2021·2 cites·32 claims
- 2078US10840241B2Resistor divider with improved resistor matchingTEXAS INSTRUMENTS INC·Filed 2019·Granted Nov 17, 2020·2 cites·10 claims
- 2178US9991350B2Low resistance sinker contactTEXAS INSTRUMENTS INC·Filed 2016·Granted Jun 5, 2018·2 cites·20 claims
- 2278US9735265B2Reduced area power devices using deep trench isolationTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 15, 2017·2 cites·10 claims
- 2378US7514309B2Methods to selectively protect NMOS regions, PMOS regions, and gate layers during EPI processTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 7, 2009·9 cites·9 claims
- 2477US9230851B2Reduction of polysilicon residue in a trench for polysilicon trench filling processesTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 5, 2016·4 cites·12 claims
- 2577US8754497B2Strained LDMOS and demosDENISON MARIE·Filed 2010·Granted Jun 17, 2014·5 cites·14 claims
- 2675US7314800B2Application of different isolation schemes for logic and embedded memoryTEXAS INSTRUMENTS INC·Filed 2005·Granted Jan 1, 2008·4 cites·4 claims
- 2774US10651274B2High-voltage drain extended MOS transistorTEXAS INSTRUMENTS INC·Filed 2018·Granted May 12, 2020·1 cites·16 claims
- 2874US9843322B2Integrated high-side driver for P-N bimodal power deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 12, 2017·2 cites·18 claims
- 2972US11764208B2Electrostatic discharge guard ring with snapback protectionTEXAS INSTRUMENTS INC·Filed 2020·Granted Sep 19, 2023·0 cites·20 claims
- 3072US8574979B2Method for integrating silicon germanium and carbon doped silicon with source/drain regions in a strained CMOS process flowSRIDHAR SEETHARAMAN·Filed 2008·Granted Nov 5, 2013·6 cites·23 claims
- 3171US10714474B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 14, 2020·1 cites·14 claims
- 3269US8114744B2Methods for reducing gate dielectric thinning on trench isolation edges and integrated circuits therefromCHATTERJEE AMITAVA·Filed 2008·Granted Feb 14, 2012·5 cites·17 claims
- 3369US7888196B2Trench isolation comprising process having multiple gate dielectric thicknesses and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Feb 15, 2011·4 cites·14 claims
- 3468US10559681B2High voltage lateral junction diode deviceTEXAS INSTRUMENTS INC·Filed 2017·Granted Feb 11, 2020·1 cites·13 claims
- 3568US7662688B2Application of different isolation schemes for logic and embedded memoryTEXAS INSTRUMENTS INC·Filed 2007·Granted Feb 16, 2010·2 cites·4 claims
- 3668US6617217B2Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitrideTEXAS INSTR INCORPATED·Filed 2001·Granted Sep 9, 2003·23 cites·15 claims
- 3767US11791198B2Trench shield isolation layerTEXAS INSTRUMENTS INC·Filed 2022·Granted Oct 17, 2023·0 cites·17 claims
- 3867US9337330B2Scheme to align LDMOS drain extension to moatTEXAS INSTRUMENTS INC·Filed 2014·Granted May 10, 2016·1 cites·8 claims
- 3967US6794730B2High performance PNP bipolar device fully compatible with CMOS processTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 21, 2004·13 cites·2 claims
- 4067US2023246107A1Vertical trench gate mosfet with integrated schottky diodeTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4166US11239318B2High-voltage drain expended MOS transistorTEXAS INSTRUMENTS INC·Filed 2020·Granted Feb 1, 2022·0 cites·27 claims
- 4265US10896904B2ESD guard ring with snapback protection and lateral buried layersTEXAS INSTRUMENTS INC·Filed 2019·Granted Jan 19, 2021·0 cites·20 claims
- 4364US12094970B2Electrostatic discharge guard ring with complementary drain extended devicesTEXAS INSTRUMENTS INC·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4463US10504885B2Electrostatic discharge guard ring with snapback protectionTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 10, 2019·0 cites·18 claims
- 4561US10672901B2Power transistor with terminal trenches in terminal resurf regionsTEXAS INSTRUMENTS INC·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 4661US7141468B2Application of different isolation schemes for logic and embedded memoryTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 28, 2006·6 cites·12 claims
- 4759US2020335589A1Semiconductor device having polysilicon field plate for power mosfetsTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 4858US10573553B2Semiconductor product and fabrication processTEXAS INSTRUMENTS INC·Filed 2019·Granted Feb 25, 2020·0 cites·20 claims
- 4958US10541326B2Multiple shielding trench gate FETTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 21, 2020·0 cites·20 claims
- 5057US11302568B2Trench shield isolation layerTEXAS INSTRUMENTS INC·Filed 2019·Granted Apr 12, 2022·0 cites·18 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →