Inventor · disambiguated record
Sey-Ping Sun
Also filed as: SUN SEY-PING
74 granted patents·13 pending applications·5,691 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38ADVANCED MICRO DEVICES INC25TAIWAN SEMICONDUCTOR MFG10BROWN DAVID E2HUANG GIN-CHEN2
Top patents by PatentIndex Score
87 records- 0199US9105490B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 11, 2015·1.6k cites·19 claims
- 0299US8823065B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·1.3k cites·16 claims
- 0398US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
- 0498US9093530B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·1.3k cites·20 claims
- 0596US10049938B2Semiconductor devices, FinFET devices, and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 14, 2018·11 cites·20 claims
- 0696US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 0796US8946828B2Semiconductor device having elevated structure and method of manufacturing the sameSUN SEY-PING·Filed 2010·Granted Feb 3, 2015·83 cites·15 claims
- 0896US6150286AMethod of making an ultra thin silicon nitride filmADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 21, 2000·167 cites·18 claims
- 0995US10276548B2Semiconductor packages having dummy connectors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 1093US9099494B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·6 cites·20 claims
- 1193US7053400B2Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobilityADVANCED MICRO DEVICES INC·Filed 2004·Granted May 30, 2006·70 cites·9 claims
- 1292US10510734B2Semiconductor packages having dummy connectors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1392US10269649B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
- 1491US9589838B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·5 cites·20 claims
- 1591US6140688ASemiconductor device with self-aligned metal-containing gateADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·88 cites·20 claims
- 1690US10651091B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·3 cites·20 claims
- 1790US9941367B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 1888US10867976B2Semiconductor packages having dummy connectors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
- 1988US9054194B2Non-planar transistors and methods of fabrication thereofTUNG CHIH-HANG·Filed 2010·Granted Jun 9, 2015·13 cites·20 claims
- 2088US8921136B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·7 cites·20 claims
- 2188US7009226B1In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivityADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 7, 2006·40 cites·9 claims
- 2286US9416297B2Chemical mechanical polishing method using slurry composition containing N-oxide compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·7 cites·20 claims
- 2385US9870956B2FinFETs with nitride liners and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·4 cites·19 claims
- 2484US9589803B2Gate electrode of field effect transistorCHEN NENG-KUO·Filed 2012·Granted Mar 7, 2017·4 cites·20 claims
- 2584US6492281B1Method of fabricating conductor structures with metal comb bridging avoidanceADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 10, 2002·41 cites·20 claims
- 2682US9812551B2Method of forming the gate electrode of field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·2 cites·20 claims
- 2782US9263252B2Method of protecting an interlayer dielectric layer and structure formed therebyCHANG CHUN-WEI·Filed 2013·Granted Feb 16, 2016·5 cites·20 claims
- 2881US6955931B1Method for detecting silicide encroachment of a gate electrode in a semiconductor arrangementADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 18, 2005·7 cites·17 claims
- 2980US9735276B2Non-planar transistors and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 15, 2017·3 cites·20 claims
- 3079US8969201B2Contact structure of semiconductor device priority claimTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·2 cites·20 claims
- 3179US2025349650A1Integrated circuit package and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3278US10333001B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·1 cites·20 claims
- 3378US9034716B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 19, 2015·3 cites·10 claims
- 3477US6417014B1Method and apparatus for reducing wafer to wafer deposition variationADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 9, 2002·54 cites·11 claims
- 3576US11854898B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3676US8124473B2Strain enhanced semiconductor devices and methods for their fabricationPAN JAMES N·Filed 2007·Granted Feb 28, 2012·9 cites·13 claims
- 3776US2025309035A1Semiconductor packages and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3875US9929272B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·1 cites·20 claims
- 3975US9006802B2Semiconductor device manufacturing methods and methods of forming insulating material layersHUANG GIN-CHEN·Filed 2011·Granted Apr 14, 2015·3 cites·20 claims
- 4074US11362000B2Wrap-around contact on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 4174US8507996B2Block contact plugs for MOS devicesSUN SEY-PING·Filed 2010·Granted Aug 13, 2013·4 cites·13 claims
- 4272US9443964B2Fin structure of FinFetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·1 cites·20 claims
- 4372US9337103B2Method for removing hard mask oxide and making gate structure of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted May 10, 2016·3 cites·20 claims
- 4469US9881803B2Chemical mechanical polishing method using slurry composition containing N-oxide compoundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 4569US6383874B1In-situ stack for high volume production of isolation regionsADVANCED MICRO DEVICES INC·Filed 2001·Granted May 7, 2002·15 cites·17 claims
- 4669US6114219AMethod of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating materialADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·36 cites·20 claims
- 4768US10797156B2Method of forming the gate electrode of field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·0 cites·20 claims
- 4868US9368446B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 14, 2016·1 cites·20 claims
- 4967US6251800B1Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·31 cites·20 claims
- 5066US11251086B2Semiconductor devices, FinFET devices, and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 15, 2022·0 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Sey-Ping Sun files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →