Inventor · disambiguated record
Sey-Shing Sun
Also filed as: SUN SEY-SHING
38 granted patents·5 pending applications·794 citations·filing 1988–2015
98Inventor score
Top patents by PatentIndex Score
43 records- 0197US6955937B1Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cellLSI LOGIC CORP·Filed 2004·Granted Oct 18, 2005·125 cites·21 claims
- 0293US6987059B1Method and structure for creating ultra low resistance damascene copper wiringLSI LOGIC CORP·Filed 2003·Granted Jan 17, 2006·70 cites·17 claims
- 0391US5598059AAC TFEL device having a white light emitting multilayer phosphorPLANAR SYSTEMS INC·Filed 1995·Granted Jan 28, 1997·97 cites·5 claims
- 0489US4897319ATFEL device having multiple layer insulatorsPLANAR SYSTEMS INC·Filed 1988·Granted Jan 30, 1990·56 cites·8 claims
- 0586US5309070AAC TFEL device having blue light emitting thiogallate phosphorSUN SEY SHING·Filed 1991·Granted May 3, 1994·63 cites·16 claims
- 0683US7196420B1Method and structure for creating ultra low resistance damascene copper wiringLSI LOGIC CORP·Filed 2005·Granted Mar 27, 2007·10 cites·11 claims
- 0778US5505986AMulti-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devicesPLANAR SYSTEMS INC·Filed 1994·Granted Apr 9, 1996·48 cites·7 claims
- 0877US7402770B2Nano structure electrode designLSI LOGIC CORP·Filed 2005·Granted Jul 22, 2008·10 cites·20 claims
- 0977US7365015B2Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial materialLSI LOGIC CORP·Filed 2004·Granted Apr 29, 2008·20 cites·14 claims
- 1077US6998343B1Method for creating barrier layers for copper diffusionLSI LOGIC CORP·Filed 2003·Granted Feb 14, 2006·26 cites·17 claims
- 1177US5656888AOxygen-doped thiogallate phosphorFiled 1995·Granted Aug 12, 1997·42 cites·12 claims
- 1276US7205673B1Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processingLSI LOGIC CORP·Filed 2005·Granted Apr 17, 2007·7 cites·3 claims
- 1375US7405116B2Application of gate edge liner to maintain gate length CD in a replacement gate transistor flowLSI CORP·Filed 2004·Granted Jul 29, 2008·18 cites·9 claims
- 1474US5677594ATFEL phosphor having metal overlayerFiled 1995·Granted Oct 14, 1997·43 cites·5 claims
- 1572US8552560B2Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processingBHATT HEMANSHU·Filed 2005·Granted Oct 8, 2013·7 cites·3 claims
- 1671US7300869B2Integrated barrier and seed layer for copper interconnect technologyLSI CORP·Filed 2004·Granted Nov 27, 2007·16 cites·24 claims
- 1770US7531442B2Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processingLSI CORP·Filed 2005·Granted May 12, 2009·5 cites·4 claims
- 1869US7956401B2Bi-axial texturing of high-K dielectric films to reduce leakage currentsLSI CORP·Filed 2009·Granted Jun 7, 2011·2 cites·34 claims
- 1965US5939825AAlternating current thin film electroluminescent device having blue light emitting alkaline earth phosphorPLANAR SYSTEMS INC·Filed 1996·Granted Aug 17, 1999·24 cites·12 claims
- 2064US7361965B2Method and apparatus for redirecting void diffusion away from vias in an integrated circuit designLSI LOGIC CORP·Filed 2005·Granted Apr 22, 2008·2 cites·18 claims
- 2164US7312127B2Incorporating dopants to enhance the dielectric properties of metal silicatesLSI CORP·Filed 2006·Granted Dec 25, 2007·1 cites·9 claims
- 2263US5581150ATFEL device with injection layerPLANAR SYSTEMS INC·Filed 1995·Granted Dec 3, 1996·25 cites·21 claims
- 2362US7436040B2Method and apparatus for diverting void diffusion in integrated circuit conductorsLSI CORP·Filed 2005·Granted Oct 14, 2008·2 cites·13 claims
- 2459US7179736B2Method for fabricating planar semiconductor wafersLSI LOGIC CORP·Filed 2004·Granted Feb 20, 2007·6 cites·15 claims
- 2558US9647208B2Low voltage embedded memory having conductive oxide and electrode stacksKARPOV ELIJAH V·Filed 2015·Granted May 9, 2017·1 cites·10 claims
- 2657US6242858B1Electroluminescent phosphor thin filmsPLANAR SYSTEMS INC·Filed 1998·Granted Jun 5, 2001·14 cites·10 claims
- 2757US6169359B1Electroluminescent phosphor thin films with increased brightness that includes an alkali halidePLANAR SYSTEMS INC·Filed 1998·Granted Jan 2, 2001·19 cites·11 claims
- 2856US9231204B2Low voltage embedded memory having conductive oxide and electrode stacksKARPOV ELIJAH V·Filed 2012·Granted Jan 5, 2016·1 cites·9 claims
- 2956US6072198AElectroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopantsPLANAR SYSTEMS INC·Filed 1998·Granted Jun 6, 2000·16 cites·8 claims
- 3053US7582566B2Method for redirecting void diffusion away from vias in an integrated circuit designLSI LOGIC CORP·Filed 2008·Granted Sep 1, 2009·0 cites·11 claims
- 3150US6451460B1Thin film electroluminescent devicePLANAR SYSTEMS INC·Filed 2000·Granted Sep 17, 2002·10 cites·42 claims
- 3250US2014030541A1Alternate pad structures/passivation integration schemes to reduce or eliminate imc cracking in post wire bonded dies during cu/low-k beol processingLSI CORP·Filed 2013·Application pending·0 cites
- 3348US7064062B2Incorporating dopants to enhance the dielectric properties of metal silicatesLSI LOGIC CORP·Filed 2003·Granted Jun 20, 2006·1 cites·16 claims
- 3447US2008150090A1DAMASCENE REPLACEMENT METAL GATE PROCESS WITH CONTROLLED GATE PROFILE AND LENGTH USING Si1-xGex AS SACRIFICIAL MATERIALLSI LOGIC CORP·Filed 2008·Application pending·0 cites
- 3546US8384165B2Application of gate edge liner to maintain gate length CD in a replacement gate transistor flowLSI CORP·Filed 2008·Granted Feb 26, 2013·0 cites·16 claims
- 3645US7619272B2Bi-axial texturing of high-K dielectric films to reduce leakage currentsLSI CORP·Filed 2004·Granted Nov 17, 2009·0 cites·16 claims
- 3741US7915122B2Self-aligned cell integration schemeNANTERO INC·Filed 2005·Granted Mar 29, 2011·1 cites·2 claims
- 3841US6043602AAlternating current thin film electroluminescent device having blue light emitting alkaline earth phosphorFiled 1999·Granted Mar 28, 2000·6 cites·10 claims
- 3940US8076779B2Reduction of macro level stresses in copper/low-K wafersSUN SEY-SHING·Filed 2005·Granted Dec 13, 2011·0 cites·4 claims
- 4039US7015096B1Bimetallic oxide compositions for gate dielectricsLSI LOGIC CORP·Filed 2004·Granted Mar 21, 2006·0 cites·38 claims
- 4139US2005224358A1Method for improved local planarity control during electropolishingLSI LOGIC CORP·Filed 2004·Application pending·0 cites
- 4236US2002043925A1Thin-film electroluminescent phosphorFiled 2001·Application pending·0 cites
- 4335US2004207093A1Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnectsFiled 2003·Application pending·0 cites
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