Inventor · disambiguated record
Seung Hoon Sung
Also filed as: SUNG SEUNG HOON · SUNG SEUNG HOON HOON
151 granted patents·34 pending applications·475 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
185 records- 0197US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 0296US11996411B2Stacked forksheet transistorsINTEL CORP·Filed 2020·Granted May 28, 2024·4 cites·21 claims
- 0396US11843058B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2021·Granted Dec 12, 2023·3 cites·18 claims
- 0496US10038054B2Variable gate width for gate all-around transistorsINTEL CORP·Filed 2017·Granted Jul 31, 2018·14 cites·15 claims
- 0596US8768271B1Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2012·Granted Jul 1, 2014·16 cites·18 claims
- 0695US12243875B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2024·Granted Mar 4, 2025·2 cites·20 claims
- 0795US11171243B2Transistor structures with a metal oxide contact bufferINTEL CORP·Filed 2019·Granted Nov 9, 2021·11 cites·14 claims
- 0895US9660064B2Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stackINTEL CORP·Filed 2013·Granted May 23, 2017·15 cites·26 claims
- 0995US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 1095US9590089B2Variable gate width for gate all-around transistorsRACHMADY WILLY·Filed 2011·Granted Mar 7, 2017·18 cites·16 claims
- 1195US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 1294US9806203B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·36 claims
- 1394US8896101B2Nonplanar III-N transistors with compositionally graded semiconductor channelsTHEN HAN WUI·Filed 2012·Granted Nov 25, 2014·14 cites·19 claims
- 1493US11222977B2Source/drain diffusion barrier for germanium NMOS transistorsINTEL CORP·Filed 2017·Granted Jan 11, 2022·8 cites·22 claims
- 1593US10096683B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 1693US10056456B2N-channel gallium nitride transistorsINTEL CORP·Filed 2014·Granted Aug 21, 2018·8 cites·25 claims
- 1792US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 1892US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 1992US9716149B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 2092US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 2191US11840124B2Piping system for air conditionerHS R & A CO LTD·Filed 2021·Granted Dec 12, 2023·3 cites·10 claims
- 2291US10325774B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2014·Granted Jun 18, 2019·8 cites·16 claims
- 2391US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 2490US11923370B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2020·Granted Mar 5, 2024·2 cites·20 claims
- 2590US11094716B2Source contact and channel interface to reduce body charging from band-to-band tunnelingINTEL CORP·Filed 2018·Granted Aug 17, 2021·6 cites·20 claims
- 2690US10665708B2Semiconductor devices with raised doped crystalline structuresINTEL CORP·Filed 2019·Granted May 26, 2020·4 cites·14 claims
- 2790US9590069B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2015·Granted Mar 7, 2017·5 cites·13 claims
- 2890US7337079B2Time-frequency domain reflectometry apparatus and methodPARK JIN-BAE·Filed 2003·Granted Feb 26, 2008·83 cites·12 claims
- 2989US12513958B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2024·Granted Dec 30, 2025·0 cites·13 claims
- 3089US11145763B2Vertical switching device with self-aligned contactINTEL CORP·Filed 2018·Granted Oct 12, 2021·5 cites·24 claims
- 3189US10032911B2Wide band gap transistor on non-native semiconductor substrateINTEL CORP·Filed 2017·Granted Jul 24, 2018·5 cites·16 claims
- 3289US8968668B2Arrays of metal and metal oxide microplasma devices with defect free oxideEDEN J GARY·Filed 2012·Granted Mar 3, 2015·3 cites·13 claims
- 3389US8954021B2Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2014·Granted Feb 10, 2015·5 cites·11 claims
- 3489US8179032B2Ellipsoidal microcavity plasma devices and powder blasting formationEDEN J GARY·Filed 2008·Granted May 15, 2012·11 cites·41 claims
- 3588US11417770B2Vertical thin-film transistors between metal layersINTEL CORP·Filed 2018·Granted Aug 16, 2022·5 cites·25 claims
- 3688US10229991B2III-N epitaxial device structures on free standing silicon mesasINTEL CORP·Filed 2014·Granted Mar 12, 2019·6 cites·25 claims
- 3788US9362369B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2015·Granted Jun 7, 2016·3 cites·10 claims
- 3887US11316027B2Relaxor ferroelectric capacitors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 3987US10930500B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2019·Granted Feb 23, 2021·3 cites·18 claims
- 4087US9373693B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2014·Granted Jun 21, 2016·5 cites·6 claims
- 4186US9923087B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2017·Granted Mar 20, 2018·3 cites·19 claims
- 4285US12046637B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2023·Granted Jul 23, 2024·0 cites·13 claims
- 4383US11398560B2Contact electrodes and dielectric structures for thin film transistorsINTEL CORP·Filed 2018·Granted Jul 26, 2022·3 cites·17 claims
- 4483US9660085B2Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereofINTEL CORP·Filed 2013·Granted May 23, 2017·6 cites·16 claims
- 4583US9640671B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2016·Granted May 2, 2017·2 cites·14 claims
- 4682US12255234B2Integrated circuit structures having germanium-based channelsINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·11 claims
- 4782US11538808B2Structures and methods for memory cellsINTEL CORP·Filed 2018·Granted Dec 27, 2022·4 cites·25 claims
- 4882US10784360B2Transistor gate trench engineering to decrease capacitance and resistanceINTEL CORP·Filed 2016·Granted Sep 22, 2020·3 cites·20 claims
- 4982US10121861B2Nanowire transistor fabrication with hardmask layersINTEL CORP·Filed 2013·Granted Nov 6, 2018·3 cites·13 claims
- 5082US9698013B2Methods and structures to prevent sidewall defects during selective epitaxyINTEL CORP·Filed 2013·Granted Jul 4, 2017·5 cites·20 claims
Showing the top 50 of 185 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →