Inventor · disambiguated record
Sen-Hong Syue
Also filed as: SYUE SEN-HONG
30 granted patents·16 pending applications·62 citations·filing 2010–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD40SYUE SEN HONG2TAIWAN SEMICONDUCTOR MFG2TAIWAN SEMICONDUCTOR MFG CO LID1TAWAN SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
46 records- 0196US11923432B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·4 cites·20 claims
- 0296US7947551B1Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted May 24, 2011·49 cites·20 claims
- 0389US10157770B2Semiconductor device having isolation structures with different thickness and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 0486US2025318262A1Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0585US12369394B2Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 0683US9396986B2Mechanism of forming a trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 19, 2016·5 cites·20 claims
- 0782US12419100B2Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 0882US2025079162A1Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0981US12324208B2Method for manufacturing semiconductor device including annealing treatment of inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 1081US12183573B2Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1180US12469742B2Shallow trench isolation forming method and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1280US2025351538A1Formation method of shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1380US2025349554A1Annealing system and method for using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1479US11923235B2Method for forming semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 1579US2024379461A1Transistor isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1677US11996412B2Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 1774US12389662B2Formation method of shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 1874US11908751B2Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 1973US11901218B2Shallow trench isolation forming method and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2073US11450555B2Method for forming semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·0 cites·20 claims
- 2173US2024266229A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2272US11854800B2Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2372US11605635B2Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 2472US2023377914A1Annealing apparatus and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2571US11545559B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 2670US11978676B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 2770US2024332401A1Method of forming a nano-fet semiconductor deviceTAWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2868US11302567B2Shallow trench isolation forming method and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 2967US11640986B2Implantation and annealing for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 3066US12489002B2Annealing apparatus and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 2, 2025·0 cites·20 claims
- 3166US12040382B2Method of forming a nano-FET semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
- 3265US2022415668A1Annealing system and method for using the sameTAIWAN SEMICONDUCTOR MFG CO LID·Filed 2022·Application pending·0 cites
- 3362US11037781B2Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 3461US12336249B2Gate spacer and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3561US11056573B2Implantation and annealing for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3661US10950490B2Semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 3760US2025169100A1Semiconductor device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3860US2025246478A1Protection of sti featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3957US2024405096A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4055US2024355927A1Semiconductor device structure with expansion film and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4154US2024170341A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4254US2024006246A1Cmos well regions with high dopant activation level and reduced extended defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4349US2025372370A1Deposition Process for Dielectric LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4444US9929268B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·0 cites·20 claims
- 4535US9945048B2Semiconductor structure and methodSYUE SEN HONG·Filed 2012·Granted Apr 17, 2018·0 cites·7 claims
- 4632US8932945B2Wafer alignment system and methodSYUE SEN-HONG·Filed 2012·Granted Jan 13, 2015·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →