Inventor · disambiguated record
Setsuko Wakimoto
Also filed as: WAKIMOTO SETSUKO
13 granted patents·2 pending applications·68 citations·filing 2002–2021
89Inventor score
Top patents by PatentIndex Score
15 records- 0192US9997358B2Silicon carbide semiconductor device having stacked epitaxial layersFUJI ELECTRIC CO LTD·Filed 2016·Granted Jun 12, 2018·7 cites·12 claims
- 0290US10236372B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Mar 19, 2019·7 cites·8 claims
- 0388US10367092B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 30, 2019·6 cites·20 claims
- 0485US6858500B2Semiconductor device and its manufacturing methodFUJI ELECTRIC CO LTD·Filed 2002·Granted Feb 22, 2005·34 cites·32 claims
- 0581US10586703B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Mar 10, 2020·2 cites·8 claims
- 0675US10832914B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Nov 10, 2020·1 cites·6 claims
- 0774US7262100B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC HOLDINGS·Filed 2005·Granted Aug 28, 2007·5 cites·4 claims
- 0858US7365392B2Semiconductor device with integrated trench lateral power MOSFETs and planar devicesFUJI ELECTRIC CO LTD·Filed 2004·Granted Apr 29, 2008·6 cites·10 claims
- 0957US12002873B2Method for adjusting groove depth and method for manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·12 claims
- 1049US7790519B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC SYSTEMS CO LTD·Filed 2007·Granted Sep 7, 2010·0 cites·9 claims
- 1149US2008303087A1Semiconductor device with integrated trench lateral power MOSFETs and planar devicesFUJI ELECTRIC CO LTD·Filed 2008·Application pending·0 cites
- 1248US2007262362A1Semiconductor device and manufacturing method thereofFUJI ELECTRIC HOLDINGS·Filed 2007·Application pending·0 cites
- 1347US11264462B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·17 claims
- 1442US10366893B2Process for making silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Jul 30, 2019·0 cites·8 claims
- 1540US8080846B2Semiconductor device having improved breakdown voltage and method of manufacturing the sameYOSHIKAWA KOH·Filed 2007·Granted Dec 20, 2011·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →