Inventor · disambiguated record
Seok-Jun Won
Also filed as: WON SEOK-JUN
86 granted patents·33 pending applications·1,382 citations·filing 1998–2023
99Inventor score
Top patents by PatentIndex Score
119 records- 0199US9029244B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 12, 2015·417 cites·8 claims
- 0295US7002788B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 21, 2006·27 cites·7 claims
- 0395US6580111B2Metal-insulator-metal capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 17, 2003·77 cites·3 claims
- 0494US9287181B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2015·Granted Mar 15, 2016·16 cites·26 claims
- 0591US7288453B2Method of fabricating analog capacitor using post-treatment techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 30, 2007·17 cites·11 claims
- 0691US7125767B2Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 24, 2006·15 cites·19 claims
- 0790US7394641B2MEMS tunable capacitor with a wide tuning rangeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 1, 2008·15 cites·23 claims
- 0890US6218260B1Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed therebySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 17, 2001·76 cites·26 claims
- 0989US7623338B2Multiple metal-insulator-metal capacitors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 24, 2009·17 cites·10 claims
- 1088US7091548B2Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·35 cites·19 claims
- 1188US6667209B2Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 23, 2003·46 cites·20 claims
- 1287US7491654B2Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·11 cites·20 claims
- 1387US7481882B2Method for forming a thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 27, 2009·34 cites·21 claims
- 1486US7018933B2Method of forming a metal-insulator-metal capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 28, 2006·30 cites·15 claims
- 1585US9786785B2Semiconductor device, method for fabricating the same, and memory system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 10, 2017·4 cites·9 claims
- 1685US9702041B2Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·4 claims
- 1784US9312376B2Semiconductor device, method for fabricating the same, and memory system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 12, 2016·6 cites·18 claims
- 1884US9035398B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 19, 2015·8 cites·19 claims
- 1984US7042698B2MEMS tunable capacitor with a wide tuning range and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 9, 2006·10 cites·13 claims
- 2083US7180120B2Semiconductor device having dual stacked MIM capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 20, 2007·11 cites·11 claims
- 2182US7872299B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·7 cites·25 claims
- 2282US7084056B2Electrical interconnection, method of forming the electrical interconnection, image sensor having the electrical interconnection and method of manufacturing the image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·28 cites·20 claims
- 2382US6946342B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·22 cites·41 claims
- 2481US9553094B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2016·Granted Jan 24, 2017·3 cites·12 claims
- 2581US9218977B2Fabricating method of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 22, 2015·5 cites·18 claims
- 2681US6750092B2Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 15, 2004·21 cites·25 claims
- 2781US6677217B2Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumpsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·24 cites·27 claims
- 2880US7633112B2Metal-insulator-metal capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 15, 2009·9 cites·11 claims
- 2980US7232492B2Method of forming thin film for improved productivitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·23 cites·24 claims
- 3079US8389355B2Semiconductor integrated circuit device having MIM capacitor and method of fabricating the sameWON SEOK-JUN·Filed 2011·Granted Mar 5, 2013·5 cites·20 claims
- 3179US7442982B2Capacitor having reaction preventing layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·6 cites·13 claims
- 3279US7316961B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·6 cites·28 claims
- 3378US7888773B2Semiconductor integrated circuit device having MIM capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 15, 2011·6 cites·21 claims
- 3478US7508649B2Multi-layered dielectric film of microelectronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 24, 2009·7 cites·14 claims
- 3577US7297591B2Method for manufacturing capacitor of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 20, 2007·18 cites·14 claims
- 3675US7435654B2Analog capacitor having at least three high-k dielectric layers, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·4 cites·18 claims
- 3775US7371651B2Flat-type capacitor for integrated circuit and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·5 cites·19 claims
- 3874US9034714B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 19, 2015·3 cites·20 claims
- 3974US6680251B2Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parametersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 20, 2004·16 cites·14 claims
- 4073US7868421B2Analog capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·4 cites·16 claims
- 4173US7203052B2Method of fabricating MEMS tunable capacitor with wide tuning rangeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 10, 2007·5 cites·20 claims
- 4273US6653186B2Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 25, 2003·15 cites·9 claims
- 4372US7708969B2Method of forming metal oxideSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 4, 2010·1 cites·10 claims
- 4472US6613629B2Methods for manufacturing storage nodes of stacked capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 2, 2003·16 cites·28 claims
- 4572US6136641AMethod for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphereSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 24, 2000·39 cites·28 claims
- 4671US6537875B2Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 25, 2003·15 cites·17 claims
- 4770US7700454B2Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impuritiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 20, 2010·4 cites·35 claims
- 4870US7476922B2Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 13, 2009·16 cites·7 claims
- 4969US6624069B2Methods of forming integrated circuit capacitors having doped HSG electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 23, 2003·12 cites·46 claims
- 5069US6207489B1Method for manufacturing capacitor of semiconductor memory device having tantalum oxide filmSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 27, 2001·35 cites·21 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →