Inventor · disambiguated record
Seiji Yaegashi
Also filed as: YAEGASHI SEIJI
18 granted patents·4 pending applications·139 citations·filing 1990–2013
93Inventor score
Files withEUDYNA DEVICES INC5OKADA MASAYA4SUMITOMO ELECTRIC INDUSTRIES3ARUBAKKU CORP CENTER KK2KIYAMA MAKOTO2
Top patents by PatentIndex Score
22 records- 0194US7592647B2Semiconductor device and manufacturing method thereofEUDYNA DEVICES INC·Filed 2006·Granted Sep 22, 2009·32 cites·8 claims
- 0291US8227810B2Semiconductor device and method for manufacturing sameOKADA MASAYA·Filed 2010·Granted Jul 24, 2012·13 cites·2 claims
- 0382US8044433B2GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltageEUDYNA DEVICES INC·Filed 2006·Granted Oct 25, 2011·10 cites·13 claims
- 0481US8525184B2Semiconductor device and method for manufacturing sameOKADA MASAYA·Filed 2012·Granted Sep 3, 2013·6 cites·3 claims
- 0581US7723751B2Semiconductor device and fabrication method of the sameEUDYNA DEVICES INC·Filed 2006·Granted May 25, 2010·9 cites·2 claims
- 0680US8896058B2Semiconductor device and method for producing sameOKADA MASAYA·Filed 2011·Granted Nov 25, 2014·6 cites·7 claims
- 0775US8890239B2Semiconductor device and method for producing the sameYAEGASHI SEIJI·Filed 2011·Granted Nov 18, 2014·6 cites·4 claims
- 0874US8969920B2Vertical GaN-based semiconductor deviceKIYAMA MAKOTO·Filed 2011·Granted Mar 3, 2015·5 cites·8 claims
- 0965US8941174B2Semiconductor device and method for producing the sameOKADA MASAYA·Filed 2011·Granted Jan 27, 2015·2 cites·4 claims
- 1064US5537278AThin film laminate magnetic head with reaction prevention layersJAPAN ENERGY CORP·Filed 1995·Granted Jul 16, 1996·18 cites·5 claims
- 1158US7728353B2Semiconductor device in which GaN-based semiconductor layer is selectively formedEUDYNA DEVICES INC·Filed 2006·Granted Jun 1, 2010·1 cites·2 claims
- 1257US8748274B2Method for fabricating semiconductor deviceNAKATA KEN·Filed 2009·Granted Jun 10, 2014·1 cites·18 claims
- 1356US6784064B2Heterojunction bipolar transistor and method of making heterojunction bipolar transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Aug 31, 2004·7 cites·10 claims
- 1451US6531722B2Bipolar transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Mar 11, 2003·5 cites·14 claims
- 1547US5236890AMethod of producing superconductor of metal oxidesARUBAKKU CORP CENTER KK·Filed 1990·Granted Aug 17, 1993·15 cites·5 claims
- 1647US2013313564A1Semiconductor device and method for manufacturing sameSEDI INC·Filed 2013·Application pending·0 cites
- 1745US2008079009A1Semiconductor deviceEUDYNA DEVICES INC·Filed 2007·Application pending·0 cites
- 1844US6664610B2Bipolar transistor and the method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 16, 2003·2 cites·11 claims
- 1937US2011193095A1Semiconductor device and method for forming the sameSEDI INC·Filed 2011·Application pending·0 cites
- 2035US8816398B2Semiconductor device and method for producing the sameKIYAMA MAKOTO·Filed 2011·Granted Aug 26, 2014·0 cites·8 claims
- 2133US2013240900A1Semiconductor device and method for producing the sameYAEGASHI SEIJI·Filed 2011·Application pending·0 cites
- 2227US5306696AMethod of producing YBa2 Cu4 Ox -type superconducting metal oxidesARUBAKKU CORP CENTER KK·Filed 1990·Granted Apr 26, 1994·1 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Seiji Yaegashi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →