Inventor · disambiguated record
Seung-Jin Yeom
Also filed as: YEOM SEUNG-JIN
69 granted patents·16 pending applications·768 citations·filing 1998–2016
99Inventor score
Files withHYNIX SEMICONDUCTOR INC36SK HYNIX INC16HYUNDAI ELECTRONICS IND10YEOM SEUNG JIN4OH JOON SEOK3
Top patents by PatentIndex Score
85 records- 0198US7910452B2Method for fabricating a cylinder-type capacitor utilizing a connected ring structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 22, 2011·325 cites·30 claims
- 0295US9466603B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Oct 11, 2016·11 cites·18 claims
- 0395US9337202B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted May 10, 2016·11 cites·17 claims
- 0495US9293362B2Semiconductor device including air gaps and method of fabricating the sameSK HYNIX INC·Filed 2013·Granted Mar 22, 2016·21 cites·14 claims
- 0594US9202774B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 1, 2015·15 cites·19 claims
- 0694US9159609B2Semiconductor device with air gap spacer and capping barrier layer and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Oct 13, 2015·15 cites·8 claims
- 0793US9514980B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Dec 6, 2016·8 cites·9 claims
- 0893US9165859B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Oct 20, 2015·13 cites·20 claims
- 0993US7835134B2Capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 16, 2010·19 cites·12 claims
- 1089US9373681B2Method for fabricating capacitor of semiconductor deviceSK HYNIX INC·Filed 2015·Granted Jun 21, 2016·5 cites·9 claims
- 1189US8822335B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Sep 2, 2014·10 cites·18 claims
- 1289US6627462B1Semiconductor device having a capacitor and method for the manufacture thereofHYUNDAI ELECTRONICS IND·Filed 2000·Granted Sep 30, 2003·40 cites·10 claims
- 1387US9698097B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jul 4, 2017·4 cites·8 claims
- 1487US9240442B2Method for fabricating capacitor of semiconductor deviceLIM SUNG-WON·Filed 2012·Granted Jan 19, 2016·9 cites·9 claims
- 1587US9024371B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted May 5, 2015·6 cites·8 claims
- 1687US7616426B2Capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Nov 10, 2009·10 cites·32 claims
- 1785US7772132B2Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 10, 2010·10 cites·28 claims
- 1882US7741216B2Metal line of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 22, 2010·10 cites·30 claims
- 1982US7670903B2Method for fabricating a cylindrical capacitor using amorphous carbon-based layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 2, 2010·10 cites·36 claims
- 2079US6524868B2Method for fabricating semiconductor memory deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Feb 25, 2003·22 cites·5 claims
- 2178US9312210B2Semiconductor device with air gap and method for fabricating the sameLEE HYO-SEOK·Filed 2012·Granted Apr 12, 2016·6 cites·14 claims
- 2278US8017491B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Sep 13, 2011·7 cites·32 claims
- 2378US7361544B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Apr 22, 2008·7 cites·21 claims
- 2477US9355903B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted May 31, 2016·2 cites·11 claims
- 2576US8088687B2Method for forming copper line having self-assembled monolayer for ULSI semiconductor devicesYEOM SEUNG JIN·Filed 2009·Granted Jan 3, 2012·7 cites·32 claims
- 2675US8338951B2Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the sameJUNG DONG HA·Filed 2011·Granted Dec 25, 2012·3 cites·6 claims
- 2775US6818935B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 16, 2004·21 cites·24 claims
- 2873US7754577B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 13, 2010·4 cites·8 claims
- 2972US7781336B2Semiconductor device including ruthenium electrode and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·3 cites·13 claims
- 3071US8092862B2Method for forming dielectric film and method for forming capacitor in semiconductor device using the sameKIL DEOK SIN·Filed 2010·Granted Jan 10, 2012·2 cites·7 claims
- 3169US8314021B2Method for fabricating semiconductor device with buried gatesCHO JIK-HO·Filed 2010·Granted Nov 20, 2012·4 cites·20 claims
- 3269US7855456B2Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Dec 21, 2010·2 cites·10 claims
- 3368US7977793B2Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 12, 2011·3 cites·11 claims
- 3468US7045071B2Method for fabricating ferroelectric random access memory deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted May 16, 2006·11 cites·14 claims
- 3566US8278218B2Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the sameOH JOON SEOK·Filed 2011·Granted Oct 2, 2012·2 cites·14 claims
- 3666US8252686B2Method for forming copper wiring in a semiconductor devicePARK HYUNG SOON·Filed 2009·Granted Aug 28, 2012·3 cites·48 claims
- 3764US9871045B2Semiconductor device with damascene bit line and method for manufacturing the sameYEOM SEUNG-JIN·Filed 2011·Granted Jan 16, 2018·2 cites·19 claims
- 3864US7820546B2Method for manufacturing semiconductor device preventing loss of junction regionHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·2 cites·20 claims
- 3963US7902065B2Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 8, 2011·2 cites·6 claims
- 4063US7875978B2Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·2 cites·19 claims
- 4163US7777336B2Metal line of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 17, 2010·2 cites·23 claims
- 4259US7875979B2Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·0 cites·6 claims
- 4358US7446053B2Capacitor with nano-composite dielectric layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Nov 4, 2008·1 cites·19 claims
- 4458US6066540AMethod for manufacturing a capacitor of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted May 23, 2000·17 cites·17 claims
- 4557US6913967B2Ferroelectric memory device with merged-top plate structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 5, 2005·6 cites·11 claims
- 4657US6162649AMethod of manufacturing ferroelectric memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Dec 19, 2000·20 cites·6 claims
- 4756US7638425B2Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Dec 29, 2009·0 cites·11 claims
- 4855US9245946B2Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 26, 2016·0 cites·4 claims
- 4955US2009148625A1Method for forming thin filmHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 5054US6812042B2Capacitor and method for fabricating ferroelectric memory device with the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 2, 2004·5 cites·7 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →