Inventor · disambiguated record
Seikoh Yoshida
Also filed as: YOSHIDA SEIKOH
30 granted patents·6 pending applications·477 citations·filing 1987–2012
97Inventor score
Top patents by PatentIndex Score
36 records- 0193US6768146B2III-V nitride semiconductor device, and protection element and power conversion apparatus using the sameFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Jul 27, 2004·74 cites·23 claims
- 0292US7038253B2GaN-based field effect transistor of a normally-off typeFURUKAWA ELECTRIC CO LTD·Filed 2004·Granted May 2, 2006·68 cites·14 claims
- 0390US6580101B2GaN-based compound semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2001·Granted Jun 17, 2003·52 cites·11 claims
- 0489US6534801B2GaN-based high electron mobility transistorFURUKAWA ELECTRIC CO LTD·Filed 2001·Granted Mar 18, 2003·49 cites·3 claims
- 0586US7812371B2GaN based semiconductor elementFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Oct 12, 2010·14 cites·12 claims
- 0685US7723752B2Nitride semiconductor heterojunction field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2007·Granted May 25, 2010·11 cites·8 claims
- 0783US8072002B2Field effect transistorNIYAMA YUKI·Filed 2009·Granted Dec 6, 2011·19 cites·19 claims
- 0882US6396085B1GaN-type semiconductor vertical field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2001·Granted May 28, 2002·31 cites·7 claims
- 0979US8093626B2Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistorNIIYAMA YUKI·Filed 2007·Granted Jan 10, 2012·10 cites·6 claims
- 1078US8134181B2Semiconductor deviceSATO YOSHIHIRO·Filed 2009·Granted Mar 13, 2012·7 cites·19 claims
- 1178US6897495B2Field effect transistor and manufacturing method thereforFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted May 24, 2005·26 cites·19 claims
- 1275US8178898B2GaN-based semiconductor elementIKEDA NARIAKI·Filed 2009·Granted May 15, 2012·6 cites·19 claims
- 1374US7821035B2ED inverter circuit and integrate circuit element including the sameFURUKAWA ELECTRIC CO LTD·Filed 2008·Granted Oct 26, 2010·6 cites·14 claims
- 1473US8304809B2GaN-based semiconductor device and method of manufacturing the sameKAYA SHUSUKE·Filed 2008·Granted Nov 6, 2012·7 cites·20 claims
- 1573US7855155B2Process for producing semiconductor device using optical absorption layerFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Dec 21, 2010·5 cites·15 claims
- 1669US6674101B2GaN-based semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Jan 6, 2004·14 cites·8 claims
- 1769US5342475AMethod of growing single crystal of compound semiconductorFURUKAWA ELECTRIC CO LTD·Filed 1992·Granted Aug 30, 1994·21 cites·14 claims
- 1867US8729603B2GaN-based semiconductor elementIKEDA NARIAKI·Filed 2012·Granted May 20, 2014·2 cites·13 claims
- 1966US8525225B2Semiconductor deviceKAMBAYASHI HIROSHI·Filed 2006·Granted Sep 3, 2013·4 cites·7 claims
- 2066US7998848B2Method of producing field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Aug 16, 2011·2 cites·10 claims
- 2159US8183597B2GaN semiconductor device having a high withstand voltageIKEDA NARIAKI·Filed 2005·Granted May 22, 2012·1 cites·18 claims
- 2257US6255004B1III-V nitride semiconductor devices and process for the production thereofFURUKAWA ELECTRIC CO LTD·Filed 1997·Granted Jul 3, 2001·20 cites·11 claims
- 2353US6576927B2Semiconductor device and GaN-based field effect transistor for use in the sameFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted Jun 10, 2003·6 cites·6 claims
- 2451US8421182B2Field effect transistor having MOS structure made of nitride compound semiconductorNOMURA TAKEHIKO·Filed 2009·Granted Apr 16, 2013·1 cites·4 claims
- 2548US9048302B2Field effect transistor having semiconductor operating layer formed with an inclined side wallSATO YOSHIHIRO·Filed 2009·Granted Jun 2, 2015·0 cites·20 claims
- 2646US8350293B2Field effect transistor and method of manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Jan 8, 2013·0 cites·7 claims
- 2745US7329908B2Nitride-based compound semiconductor electron device including a buffer layer structureFURUKAWA ELECTRIC CO LTD·Filed 2004·Granted Feb 12, 2008·2 cites·9 claims
- 2844US2007045639A1Semiconductor electronic deviceFURUKAWA ELECTRIC CO LTD·Filed 2006·Application pending·0 cites
- 2941US2008006846A1Iii-v nitride semiconductor device and method of forming electrodeFURUKAWA ELECTRIC CO LTD·Filed 2007·Application pending·0 cites
- 3040US4853066AMethod for growing compound semiconductor crystalFURUKAWA ELECTRIC CO LTD·Filed 1987·Granted Aug 1, 1989·6 cites·7 claims
- 3139US2006081897A1GaN-based semiconductor integrated circuitFURUKAWA ELECTRIC CO LTD·Filed 2005·Application pending·0 cites
- 3238US5741360AMethod of growing a crystal of a compound semiconductor at a low temperatureOPTOELECTRONICS TECHNOLOGY RES·Filed 1995·Granted Apr 21, 1998·8 cites·14 claims
- 3338US5379717AMethod of growing single crystal of compound semiconductorsFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Jan 10, 1995·5 cites·14 claims
- 3437US2002136932A1GaN-based light emitting deviceFiled 2002·Application pending·0 cites
- 3535US2001015437A1GaN field-effect transistor, inverter device, and production processes thereforFiled 2001·Application pending·0 cites
- 3632US2010219455A1Iii-nitride semiconductor field effect transistorNIIYAMA YUKI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →