Inventor · disambiguated record
Seungchan Yun
Also filed as: YUN SEUNGCHAN
18 granted patents·28 pending applications·10 citations·filing 2020–2025
88Inventor score
Files withSAMSUNG ELECTRONICS CO LTD46
Top patents by PatentIndex Score
46 records- 0192US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0292US11482619B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·3 cites·8 claims
- 0387US11769830B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
- 0487US11764207B2Diode structures of stacked devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 0582US11670701B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 6, 2023·1 cites·20 claims
- 0682US11563108B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 24, 2023·1 cites·17 claims
- 0774US2025107172A1Multi-stack semiconductor device with zebra nanosheet structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0874US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0973US12094869B2Diode structures of stacked devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1069US12278285B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 1169US12211837B1Semiconductor device including gate contact structure formed from gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jan 28, 2025·0 cites·8 claims
- 1268US12490491B2Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·15 claims
- 1368US12176417B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 1467US12183786B2Multi-stack semiconductor device with zebra nanosheet structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·6 claims
- 1566US12224336B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·16 claims
- 1666US11935953B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·19 claims
- 1760US12317588B2Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·0 cites·18 claims
- 1860US2025120183A1Semiconductor device including gate contact structure formed from gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1959US2025022773A1Integrated circuit devices including stacked field-effect transistors in multi-height cells and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2059US2025151389A1Stacked transistor device having capping layer on upper gate material, and related fabrication methodSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2159US2025149340A1Transistor devices having gate-cuts, and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2259US2024395900A1Semiconductor device including backside source/drain contact structure with contact spacer and backside gate contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2359US2025159928A1Transistor device having gate structure with isolation region therein, and related fabrication methodSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2459US2025159980A1Stacked transistor device formed using multi-layer dummy gateSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2558US2025120127A1Integrated circuit device including a pfet with a silicon germanium cladded channel and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2658US2025254988A1Semiconductor device including stacked forksheet transistor structure with isolation wallSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2757US12249603B2Resistor structures of integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2857US12243946B2Integrated circuit devices including a common gate electrode and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 2957US2025169186A1Transistor device having semiconductor spacer, and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3057US2025098324A13d-stacked semiconductor device having different channel structures, source/drain regions, and gate structures at different levelsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3156US12317582B2Integrated circuit devices including a metal resistor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 3256US2025040242A13d-stacked semiconductor device including middle isolation structure and bspdn structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3356US2024363633A1Integrated circuit device including stacked transistors and methods of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3456US2024363491A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3555US2024290689A1Semiconductor device including backside contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3655US2023163202A1Field-effect transistor structure including passive device and back side power distribution network (bspdn)SAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3754US2024162309A13dsfet device including self-aligned source/drain contact structure with spacer structure at side surface thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3854US2024096889A1Integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3954US2024023326A1Multi-stack nanosheet structure including semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4053US2024079329A1Integrated circuit devices including a back side power distribution network structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4152US2025031444A13d-stacked semiconductor device manufactured using channel spacerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4252US2024371880A1Integrated circuit devices including intergate spacer and methods of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4352US2024282855A1Semiconductor device including 3d-stacked field-effect transistors having isolation structure between contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4450US2024072048A1Integrated circuit device including integrated insulator and methods of fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4550US2023343824A13d-stacked semiconductor device including gate structure formed of polycrystalline silicon or polycrystalline silicon including dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4648US2023352529A13d-stacked semiconductor device having different channel layer intervals at lower nanosheet transistor and upper nanosheet transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →