Inventor · disambiguated record
Shakir A. Abbas
Also filed as: ABBAS SHAKIR A · ABBAS SHAKIR AHMED
11 granted patents·350 citations·filing 1974–1982
93Inventor score
Files withIBM11
Top patents by PatentIndex Score
11 records- 0192US3962052AProcess for forming apertures in silicon bodiesIBM·Filed 1975·Granted Jun 8, 1976·72 cites·16 claims
- 0284US4359816ASelf-aligned metal process for field effect transistor integrated circuitsIBM·Filed 1980·Granted Nov 23, 1982·61 cites·28 claims
- 0383US4044452AProcess for making field effect and bipolar transistors on the same semiconductor chipIBM·Filed 1976·Granted Aug 30, 1977·41 cites·7 claims
- 0481US3992701ANon-volatile memory cell and array using substrate currentIBM·Filed 1975·Granted Nov 16, 1976·23 cites·12 claims
- 0581US3961355ASemiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of formingIBM·Filed 1974·Granted Jun 1, 1976·27 cites·6 claims
- 0674US4424621AMethod to fabricate stud structure for self-aligned metallizationIBM·Filed 1981·Granted Jan 10, 1984·39 cites·25 claims
- 0774US4051273AField effect transistor structure and method of making sameIBM·Filed 1975·Granted Sep 27, 1977·25 cites·10 claims
- 0861US4322883ASelf-aligned metal process for integrated injection logic integrated circuitsIBM·Filed 1980·Granted Apr 6, 1982·25 cites·13 claims
- 0959US4513303ASelf-aligned metal field effect transistor integrated circuitIBM·Filed 1982·Granted Apr 23, 1985·21 cites·5 claims
- 1055US4010482ANon-volatile schottky barrier diode memory cellIBM·Filed 1975·Granted Mar 1, 1977·9 cites·5 claims
- 1142US4062040AField effect transistor structure and method for making sameIBM·Filed 1977·Granted Dec 6, 1977·7 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →