Inventor · disambiguated record
Shinji Aono
Also filed as: AONO SHINJI
12 granted patents·3 pending applications·124 citations·filing 1993–2012
91Inventor score
Top patents by PatentIndex Score
15 records- 0184US7986003B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 26, 2011·16 cites·9 claims
- 0275US7750365B2Insulated gate bipolar transistor with built-in freewheeling diodeMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jul 6, 2010·5 cites·2 claims
- 0373US6177713B1Free wheel diode for preventing destruction of a field limiting innermost circumferential layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 23, 2001·35 cites·6 claims
- 0471US8482030B2Insulated gate bipolar transistor and manufacturing method thereofAONO SHINJI·Filed 2011·Granted Jul 9, 2013·3 cites·26 claims
- 0565US7189620B2Semiconductor device including a channel stop structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Mar 13, 2007·2 cites·8 claims
- 0662US9299818B2Insulating gate-type bipolar transistorAONO SHINJI·Filed 2012·Granted Mar 29, 2016·2 cites·9 claims
- 0761US5751023ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 12, 1998·28 cites·1 claims
- 0850US6909142B2Semiconductor device including a channel stop structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jun 21, 2005·3 cites·7 claims
- 0947US2005233542A1Semiconductor device including a channel stop structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 1046US6838744B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jan 4, 2005·2 cites·10 claims
- 1144US5738571AApparatus and method for forming ribs on a belt/belt sleeveMITSUBOSHI BELTING LTD·Filed 1996·Granted Apr 14, 1998·14 cites·21 claims
- 1242US5850088ATeg for carrier lifetime evaluationMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 15, 1998·11 cites·9 claims
- 1338US2005017290A1Insulated gate bipolar transistor with built-in freewheeling diodeMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 1437US2010032711A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 1531US5382926AMultiple bit loaded line phase shifterMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 17, 1995·3 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →