Inventor · disambiguated record
Shih Wei Bih
Also filed as: BIH SHIH-WEI
17 granted patents·3 pending applications·11 citations·filing 2013–2024
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20
Top patents by PatentIndex Score
20 records- 0190US10446662B2Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·6 cites·20 claims
- 0283US2024379540A1Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0381US12125783B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 0481US10658315B2Redistribution layer metallic structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·2 cites·20 claims
- 0580US12180576B2PVD target design and semiconductor devices formed using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0679US2025092508A1Pvd target design and semiconductor devices formed using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0778US12040293B2Redistribution layer metallic structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 0876US10916517B2Redistribution layer metallic structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·1 cites·20 claims
- 0975US10354965B2Bonding pad process with protective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·2 cites·20 claims
- 1072US11664308B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1172US11502050B2Redistribution layer metallic structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·0 cites·20 claims
- 1270US11725270B2PVD target design and semiconductor devices formed using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 1369US12142664B2Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·20 claims
- 1466US11177365B2Semiconductor device with adhesion layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 1566US11164957B2Semiconductor device with adhesion layer and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·20 claims
- 1660US10923416B2Interconnect structure with insulation layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·0 cites·20 claims
- 1760US10490649B2Method of fabricating semiconductor device with adhesion layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·0 cites·20 claims
- 1858US9803274B2Process kit of physical vapor deposition chamber and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 31, 2017·0 cites·10 claims
- 1954US2018350948A1Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Application pending·0 cites
- 2052US11081341B2Apparatus for fabricating a semiconductor device with target sputtering and target sputtering method for fabricating the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →