Inventor · disambiguated record
Shawn D. Burnham
Also filed as: BURNHAM SHAWN · BURNHAM SHAWN D
12 granted patents·1 pending application·256 citations·filing 2009–2015
92Inventor score
Top patents by PatentIndex Score
13 records- 0196US8530978B1High current high voltage GaN field effect transistors and method of fabricating sameCHU RONGMING·Filed 2011·Granted Sep 10, 2013·58 cites·20 claims
- 0295US9142626B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2013·Granted Sep 22, 2015·18 cites·15 claims
- 0395US8124505B1Two stage plasma etching method for enhancement mode GaN HFETBURNHAM SHAWN D·Filed 2010·Granted Feb 28, 2012·79 cites·10 claims
- 0494US8383471B1Self aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2011·Granted Feb 26, 2013·28 cites·27 claims
- 0591US8748244B1Enhancement and depletion mode GaN HMETs on the same substrateCORRION ANDREA·Filed 2012·Granted Jun 10, 2014·15 cites·6 claims
- 0690US8686473B1Apparatus and method for reducing the interface resistance in GaN heterojunction FETsMICOVIC MIROSLAV·Filed 2010·Granted Apr 1, 2014·14 cites·11 claims
- 0790US8653559B2AlGaN/GaN hybrid MOS-HFETCORRION ANDREA·Filed 2011·Granted Feb 18, 2014·19 cites·24 claims
- 0887US9929243B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2015·Granted Mar 27, 2018·4 cites·17 claims
- 0986US8728884B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHUSSAIN TAHIR·Filed 2009·Granted May 20, 2014·13 cites·10 claims
- 1085US9252247B1Apparatus and method for reducing the interface resistance in GaN Heterojunction FETsHRL LAB LLC·Filed 2014·Granted Feb 2, 2016·6 cites·15 claims
- 1168US8766321B2Self-aligned sidewall gate GaN HEMTHRL LAB·Filed 2012·Granted Jul 1, 2014·2 cites·6 claims
- 1254US9190534B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHRL LAB LLC·Filed 2014·Granted Nov 17, 2015·0 cites·12 claims
- 1339US2013328061A1Normally-off gallium nitride transistor with insulating gate and method of making the sameCHU RONGMING·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →