Inventor · disambiguated record

Shih-Chieh Chang

Also filed as: CHANG SHIH-CHIEH

170 granted patents·51 pending applications·828 citations·filing 1984–2025

99Inventor score

Technology areasH10P H10D H10W H01L G06F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD146 CHANG SHIH-CHIEH20 DELTA ELECTRONICS INC10 CHIPBOND TECHNOLOGY CORP9 TAIWAN SEMICONDUCTOR MFG8

Top patents by PatentIndex Score

221 records

0199US10510871B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·357 cites·20 claims
0298US10991826B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 27, 2021·6 cites·20 claims
0397US11367784B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
0497US10680106B2Method of forming source/drain epitaxial stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·11 cites·20 claims
0597US10522359B2FinFET device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·14 cites·20 claims
0697US10510889B2P-type strained channel in a fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
0797US10164048B1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·14 cites·20 claims
0896US11393898B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·4 cites·20 claims
0996US10720530B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·9 cites·20 claims
1096US10164098B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·10 cites·11 claims
1196US9847334B1Structure and formation method of semiconductor device with channel layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·17 cites·20 claims
1296US9450047B1Semiconductor structure having enlarged regrowth regions and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·22 cites·20 claims
1395US12119394B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
1495US11444199B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·4 cites·20 claims
1595US9899273B1Semiconductor structure with dopants diffuse protection and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·13 cites·20 claims
1694US12211938B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·1 cites·20 claims
1794US11522086B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·2 cites·20 claims
1894US11094826B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·7 cites·20 claims
1994US10879126B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·7 cites·20 claims
2094US9870926B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·11 cites·19 claims
2193US12148794B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·2 cites·20 claims
2293US11569383B2Method of forming source/drain epitaxial stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
2393US10535736B2Fully strained channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·6 cites·20 claims
2493US10515951B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·6 cites·20 claims
2593US10269646B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
2693US9620503B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·9 cites·20 claims
2793US7278751B2Screwdriver with illuminationCHANG SHIH-CHIEH·Filed 2005·Granted Oct 9, 2007·41 cites·14 claims
2892US12087846B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·1 cites·20 claims
2992US11769817B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
3091US11404561B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
3191US10868183B2FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·4 cites·20 claims
3291US10651287B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
3391US9543387B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·13 cites·20 claims
3490US11222963B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·3 cites·20 claims
3590US11011433B2NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
3690US10164100B2Formation method and structure semiconductor device with source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·4 cites·20 claims
3788US12446255B2Semiconductor structure with source/drain multi-layer structure and method for forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2024·Granted Oct 14, 2025·0 cites·16 claims
3888US2024395905A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3988US2024395937A1Semiconductor device having a shaped epitaxial region with shaping sectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4087US11302782B2In-situ straining epitaxial processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·2 cites·20 claims
4187US10840358B2Method for manufacturing semiconductor structure with source/drain structure having modified shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·3 cites·20 claims
4287US9847478B2Methods and apparatus for resistive random access memory (RRAM)CHANG TING-CHANG·Filed 2012·Granted Dec 19, 2017·6 cites·20 claims
4387US8247322B2Via/contact and damascene structures and manufacturing methods thereofCHANG SHIH-CHIEH·Filed 2007·Granted Aug 21, 2012·14 cites·16 claims
4487US8179181B2Power-mode-aware clock tree and synthesis method thereofLUNG CHIAO-LING·Filed 2010·Granted May 15, 2012·21 cites·10 claims
4587US2024379814A1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4686US12446254B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
4786US12142663B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
4886US12119392B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
4986US10629496B2Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·3 cites·20 claims
5086US10468530B2Semiconductor structure with source/drain multi-layer structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims

Showing the top 50 of 221 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →