Inventor · disambiguated record
Shui-Hung Chen
Also filed as: CHEN SHUI-HUNG
49 granted patents·4 pending applications·1,662 citations·filing 1997–2008
99Inventor score
Top patents by PatentIndex Score
53 records- 0195US6583466B2Vertical split gate flash memory device in an orthogonal array of rows and columns with devices in columns having shared source regionsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 24, 2003·83 cites·16 claims
- 0295US6548856B1Vertical stacked gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 15, 2003·61 cites·3 claims
- 0395US6093606AMethod of manufacture of vertical stacked gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 25, 2000·106 cites·8 claims
- 0494US6207532B1STI process for improving isolation for deep sub-micron applicationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 27, 2001·175 cites·21 claims
- 0594US6033963AMethod of forming a metal gate for CMOS devices using a replacement gate processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 7, 2000·225 cites·18 claims
- 0693US6614693B1Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·77 cites·72 claims
- 0790US6645820B1Polycrystalline silicon diode string for ESD protection of different power supply connectionsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 11, 2003·50 cites·9 claims
- 0890US6122201AClipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 19, 2000·79 cites·39 claims
- 0988US6937457B2Decoupling capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 30, 2005·37 cites·23 claims
- 1088US6087222AMethod of manufacture of vertical split gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 11, 2000·77 cites·18 claims
- 1187US6391719B1Method of manufacture of vertical split gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·33 cites·16 claims
- 1287US6214670B1Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·68 cites·14 claims
- 1385US6734055B1Multi-level (4 state/2-bit) stacked gate flash memory cellTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2002·Granted May 11, 2004·30 cites·18 claims
- 1480US6420221B1Method of manufacturing a highly latchup-immune CMOS I/O structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 16, 2002·24 cites·6 claims
- 1579US6323523B1N-type structure for n-type pull-up and down I/O protection circuitTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·25 cites·12 claims
- 1678US6552372B2Integrated circuit having improved ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·26 cites·12 claims
- 1777US7508639B2Input/output devices with robustness of ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 24, 2009·6 cites·19 claims
- 1877US7247543B2Decoupling capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 24, 2007·6 cites·2 claims
- 1977US6614078B2Highly latchup-immune CMOS I/O structuresTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·21 cites·11 claims
- 2077US6362035B1Channel stop ion implantation method for CMOS integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 26, 2002·26 cites·20 claims
- 2176US6190954B1Robust latchup-immune CMOS structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 20, 2001·36 cites·10 claims
- 2276US6127226AMethod for forming vertical channel flash memory cell using P/N junction isolationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 3, 2000·34 cites·32 claims
- 2375US6133097AMethod for forming mirror image split gate flash memory devices by forming a central source line slotTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 17, 2000·27 cites·15 claims
- 2475US6011288AFlash memory cell with vertical channels, and source/drain bus linesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 4, 2000·33 cites·1 claims
- 2573US6437397B1Flash memory cell with vertically oriented channelTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 20, 2002·26 cites·25 claims
- 2673US6225162B1Step-shaped floating poly-si gate to improve gate coupling ratio for flash memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 1, 2001·29 cites·7 claims
- 2771US6541824B2Modified source side inserted anti-type diffusion ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 1, 2003·14 cites·19 claims
- 2870US6876041B2ESD protection componentTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 5, 2005·15 cites·4 claims
- 2970US6756642B2Integrated circuit having improved ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·15 cites·13 claims
- 3069US6762439B1Diode for power protectionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 13, 2004·14 cites·20 claims
- 3169US6277723B1Plasma damage protection cell using floating N/P/N and P/N/P structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·24 cites·10 claims
- 3268US6838725B2Step-shaped floating poly-si gate to improve a gate coupling ratio for flash memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 4, 2005·12 cites·4 claims
- 3366US8018000B2Electrostatic discharge protection pattern for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Sep 13, 2011·4 cites·15 claims
- 3466US5960284AMethod for forming vertical channel flash memory cell and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 28, 1999·19 cites·20 claims
- 3565US6326662B1Split gate flash memory device with source lineTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 4, 2001·8 cites·10 claims
- 3664US6306695B1Modified source side inserted anti-type diffusion ESD protection deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 23, 2001·20 cites·9 claims
- 3763US6730968B1Whole chip ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 4, 2004·8 cites·12 claims
- 3862US6207482B1Integration method for deep sub-micron dual gate transistor designTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 27, 2001·29 cites·25 claims
- 3958US7122857B2Multi-level (4state/2-bit) stacked gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·6 cites·9 claims
- 4056US6242314B1Method for fabricating a on-chip temperature controller by co-implant polysilicon resistorTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 5, 2001·16 cites·20 claims
- 4154US7826193B2String contact structure for high voltage ESDTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 2, 2010·2 cites·9 claims
- 4251US6888248B2Extended length metal line for improved ESD performanceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 3, 2005·4 cites·14 claims
- 4350US7256975B2ESD protection circuit and methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 14, 2007·4 cites·18 claims
- 4450US6066874AFlash memory cell with vertical channels, and source/drain bus linesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 23, 2000·10 cites·25 claims
- 4548US6992361B2Deep well implant structure providing latch-up resistant CMOS semiconductor productTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 31, 2006·5 cites·20 claims
- 4647US7078772B2Whole chip ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 18, 2006·2 cites·12 claims
- 4747US6232160B1Method of delta-channel in deep sub-micron processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 15, 2001·10 cites·22 claims
- 4843US6879203B2Whole chip ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 12, 2005·1 cites·2 claims
- 4939US2004070902A1Polycrystalline silicon diode string for ESD protection of different power supply connectionsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 5038US2004105201A1Scheme for eliminating the channel unexpected turn-on during ESD zappingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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