Inventor · disambiguated record
Shang-Hsuan Chiu
Also filed as: CHIU SHANG-HSUAN
9 granted patents·10 pending applications·4 citations·filing 2021–2025
78Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
Top patents by PatentIndex Score
19 records- 0189US12095464B2Integrated circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·3 cites·20 claims
- 0286US11853670B2Arrangement of source or drain conductors of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 0382US2025328716A1Arrangement of source or drain conductors of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0479US2025357346A1Method of manufacturing integrated circuit structure including first metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0578US12346644B2Arrangement of source or drain conductors of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0675US2025364399A1Semiconductor devices with reduced effect of capacitive couplingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0774US2024395670A1Method of making semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0874US2024371753A1Source/drain isolation structure and layout methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0973US12450417B2Semiconductor metal layer structure over cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 1070US12057390B2Source/drain isolation structure, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 1169US2024086611A1Base layout cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1269US2024396536A1Integrated circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1368US12199615B2Integrated circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1466US12417980B2First metal structure, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 1566US2024372538A1Integrated circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1662US11868697B2Base layout cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 1760US2023386997A1Semiconductor devices with reduced effect of capacitive couplingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1860US2025357921A1Integrated circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1959US12513977B2Semiconductor cell and active area arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →