Inventor · disambiguated record
Shih-Chuan Chiu
Also filed as: CHIU SHIH-CHUAN
25 granted patents·19 pending applications·31 citations·filing 2019–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37MEDIATEK INC5ASUSTEK COMP INC1TAIWAN CEMICONDUCTOR MFG COMPANY LTD1
Top patents by PatentIndex Score
44 records- 0198US11482595B1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·4 cites·20 claims
- 0298US11222892B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·16 cites·20 claims
- 0397US11502201B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·4 cites·20 claims
- 0494US11777003B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 0593US11955515B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
- 0691US11804486B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
- 0791US2025366150A1Dual side contact structures in semiconductor devicesTAIWAN CEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
- 0891US2025359290A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0991US2025359224A1Source/Drain Metal Contact And Formation ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1087US2025331220A1Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1186US12457794B2Dual side contact structures for source/drain regions in semiconductor transistor devices and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 1285US12432994B2Source/drain metal contact and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 1385US12382709B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1485US12363939B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1585US12125852B2Multi-gate transistors with backside power rail and reduced gate-drain capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 1685US11978773B2Formation method of semiconductor device structure with semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·1 cites·20 claims
- 1784US12266566B2Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 1884US12266700B2Semiconductor nanostructures device structure with backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 1984US2024387534A1Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2083US12027372B2Contact structures with deposited silicide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 2183US2024312786A1Contact Structures With Deposited Silicide LayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2283US2025233018A1Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2382US12148805B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 2480US2025006807A1Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2579US12009254B2Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2679US11955552B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 2779US11335592B2Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·1 cites·20 claims
- 2879US11018012B2Contact structures with deposited silicide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·1 cites·20 claims
- 2978US11901238B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 3078US2025359154A1Field effect transistor with dual silicide and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3176US11557484B2Contact structures with deposited silicide layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 3276US2025203931A1Semiconductor device structure with backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3375US11855144B2Source/drain metal contact and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3466US2022367663A1Interconnect structure having a multi-deck conductive feature and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3564US11043558B2Source/drain metal contact and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 3663US11342229B2Method for forming a semiconductor device structure having an electrical connection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·0 cites·20 claims
- 3761US2024379549A1Lateral diode for backside power rail applicationMEDIATEK INC·Filed 2024·Application pending·0 cites
- 3859US2021391438A1Interconnect Structure Having a Multi-Deck Conductive Feature and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 3958US2024178221A1Semiconductor structure of schottky devicesMEDIATEK INC·Filed 2023·Application pending·0 cites
- 4057US2024128262A1Bipolar junction transistor (bjt) structureMEDIATEK INC·Filed 2023·Application pending·0 cites
- 4155US2025393296A1Semiconductor structureMEDIATEK INC·Filed 2025·Application pending·0 cites
- 4255US2024014295A1Semiconductor structure of BIPOLAR JUNCTION TRANSISTOR (BJT)MEDIATEK INC·Filed 2023·Application pending·0 cites
- 4352US2023009077A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4436US2023011763A1Gesture determining method and electronic deviceASUSTEK COMP INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →