Inventor · disambiguated record
Shao-Yu Chou
Also filed as: CHOU SHAO-YU
91 granted patents·12 pending applications·352 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD65TAIWAN SEMICONDUCTOR MFG16CHEN YEN-HUEI6CHAN WEI MIN4WANG LI-WEN4
Top patents by PatentIndex Score
103 records- 0199US11094387B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·8 cites·20 claims
- 0298US11670941B2Single-gate-oxide power inverter and electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 6, 2023·3 cites·20 claims
- 0398US11410740B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
- 0497US11626368B2Semiconductor device having fuse array and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 11, 2023·4 cites·20 claims
- 0596US11903188B2Memory devices, semiconductor devices, and methods of operating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0696US11837300B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·2 cites·20 claims
- 0795US11658114B2Fusible structures and methods of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 0894US11862264B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
- 0993US11374403B2Single-gate-oxide power inverter and electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·2 cites·20 claims
- 1093US9048655B2ESD protection scheme using I/O padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Jun 2, 2015·13 cites·18 claims
- 1192US11069401B2Memory with symmetric read current profile and read method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·3 cites·20 claims
- 1292US10163783B1Reduced area efuse cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·12 cites·20 claims
- 1391US11568948B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·2 cites·20 claims
- 1490US8391097B2Memory word-line driver having reduced power consumptionCHAN WEI MIN·Filed 2010·Granted Mar 5, 2013·16 cites·13 claims
- 1588US10931103B2Single-gate-oxide power inverter and electrostatic discharge protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·4 cites·20 claims
- 1688US10269420B2Memory with symmetric read current profile and read method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 1788US2025329637A1Semiconductor device having fuse array and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1887US12283951B2Voltage provision circuits with core transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·2 cites·20 claims
- 1987US9401258B2Fuse structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·10 cites·20 claims
- 2086US10283210B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·4 cites·20 claims
- 2186US9805815B1Electrical fuse bit cell and mask setTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 31, 2017·4 cites·20 claims
- 2286US9536827B1Semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 3, 2017·6 cites·20 claims
- 2384US10109366B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·4 cites·20 claims
- 2483US12211568B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2583US11621037B2Memory with symmetric read current profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·1 cites·20 claims
- 2683US10803967B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 13, 2020·1 cites·20 claims
- 2783US10643726B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·3 cites·20 claims
- 2883US6674317B1Output stage of a charge pump circuit providing relatively stable output voltage without voltage degradationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 6, 2004·44 cites·31 claims
- 2983US2024370622A1Anti-fuse deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3082US12237264B2Fusible structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 3182US12073169B2Anti-fuse arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3282US12010833B2Method and structure for reduce OTP cell area and leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 3382US10929588B2Integrated circuit layout, structure, system, and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·2 cites·20 claims
- 3482US2024292609A1Method and structure for reduce otp cell area and leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3581US8570823B2Sense amplifier with low sensing margin and high device variation toleranceCHEN YEN-HUEI·Filed 2010·Granted Oct 29, 2013·8 cites·22 claims
- 3681US2025118384A1Multi-Fuse Memory Cell Circuit and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3780US12347771B2Semiconductor device having fuse array and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 3880US10706918B2Memory with symmetric read current profile and read method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 3980US8723265B2Semiconductor structure with dummy polysilicon linesCHEN YEN-HUEI·Filed 2011·Granted May 13, 2014·5 cites·20 claims
- 4080US8477527B2SRAM timing cell apparatus and methodsWANG LI-WEN·Filed 2011·Granted Jul 2, 2013·8 cites·20 claims
- 4180US8406039B2Low-leakage power supply architecture for an SRAM arrayLEE CHENG HUNG·Filed 2010·Granted Mar 26, 2013·7 cites·14 claims
- 4280US8296698B2High-speed SRAMWANG LI-WEN·Filed 2010·Granted Oct 23, 2012·6 cites·14 claims
- 4380US7808812B2Robust 8T SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 5, 2010·12 cites·18 claims
- 4479US12237028B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 4579US12205891B2Methods of manufacturing fusible structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 4679US8395950B2Memory device having a clock skew generatorLIN TZU-KUEI·Filed 2010·Granted Mar 12, 2013·7 cites·17 claims
- 4779US2025191667A1Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4878US11758715B2System and method for reducing cell area and current leakage in anti-fuse cell arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 4978US2024385639A1System and method for a low voltage supply bandgapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5078US2025192034A1Fusible structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →