Inventor · disambiguated record
Shinichi Domae
Also filed as: DOMAE SHINICHI
9 granted patents·3 pending applications·67 citations·filing 1998–2012
87Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD4PANASONIC CORP3DOMAE SHINICHI2MATSUSHITA ELECTRONICS CORP2
Top patents by PatentIndex Score
12 records- 0175US6252427B1CMOS inverter and standard cell using the sameMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Jun 26, 2001·37 cites·14 claims
- 0274US7443031B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Oct 28, 2008·2 cites·32 claims
- 0369US7911060B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationPANASONIC CORP·Filed 2009·Granted Mar 22, 2011·1 cites·10 claims
- 0467US6197685B1Method of producing multilayer wiring device with offset axises of upper and lower plugsMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Mar 6, 2001·19 cites·1 claims
- 0565US7148572B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 12, 2006·5 cites·6 claims
- 0660US7642654B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor to be used for reliability evaluationPANASONIC CORP·Filed 2008·Granted Jan 5, 2010·0 cites·34 claims
- 0758US6580176B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·3 cites·4 claims
- 0849US8110495B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationDOMAE SHINICHI·Filed 2011·Granted Feb 7, 2012·0 cites·5 claims
- 0944US6815338B2Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 9, 2004·0 cites·1 claims
- 1040US2013105939A1Semiconductor devicePANASONIC CORP·Filed 2012·Application pending·0 cites
- 1133US2012280406A1Semiconductor deviceDOMAE SHINICHI·Filed 2012·Application pending·0 cites
- 1232US2002005584A1Semiconductor deviceFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →