Inventor · disambiguated record
Shuji Fujiwara
Also filed as: FUJIWARA SHUJI
25 granted patents·4 pending applications·294 citations·filing 1991–2021
95Inventor score
Files withNEC CORP9SANYO ELECTRIC CO6ALPS ALPINE CO LTD2MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2SEMICONDUCTOR COMPONENTS IND LLC2
Top patents by PatentIndex Score
29 records- 0194US9300954B2Surrounding information-obtaining device for working vehicleTADANO LTD·Filed 2013·Granted Mar 29, 2016·32 cites·17 claims
- 0290US5959326ACapacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentrationNEC CORP·Filed 1997·Granted Sep 28, 1999·88 cites·9 claims
- 0383US9540218B2Work plan verification deviceTADANO LTD·Filed 2013·Granted Jan 10, 2017·10 cites·5 claims
- 0466US5938857AMethod for rinsing and drying a substrateNEC CORP·Filed 1998·Granted Aug 17, 1999·31 cites·21 claims
- 0564US6103568AManufacturing method of cylindrical stacked electrodeNEC CORP·Filed 1999·Granted Aug 15, 2000·24 cites·6 claims
- 0662US7244529B2Alkaline dry batteryMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 17, 2007·5 cites·4 claims
- 0760US5858834AMethod for forming cylindrical capacitor lower plate in semiconductor deviceNEC CORP·Filed 1997·Granted Jan 12, 1999·21 cites·12 claims
- 0858US2020294993A1Electrostatic discharge (esd) robust transistors and related methodsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 0956US7459766B2Semiconductor bipolar transistorSANYO ELECTRIC CO·Filed 2006·Granted Dec 2, 2008·1 cites·12 claims
- 1055US5356870AMethod for processing superconducting thin filmsSANYO ELECTRIC CO·Filed 1993·Granted Oct 18, 1994·12 cites·15 claims
- 1154US8723258B2Electrostatic discharge (ESD) tolerance for a lateral double diffusion metal oxide semiconductor (LDMOS) transistorNAKAYA KIYOFUMI·Filed 2011·Granted May 13, 2014·2 cites·17 claims
- 1251US10692853B2Electrostatic discharge (ESD) robust transistors and related methodsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Jun 23, 2020·0 cites·20 claims
- 1351US5880069AProcess of making high Tc Josephson junction deviceSANYO ELECTRIC CO·Filed 1994·Granted Mar 9, 1999·15 cites·8 claims
- 1450US6218230B1Method for producing capacitor having hemispherical grainNEC CORP·Filed 1998·Granted Apr 17, 2001·12 cites·22 claims
- 1549US11364435B2Operation deviceALPS ALPINE CO LTD·Filed 2021·Granted Jun 21, 2022·0 cites·7 claims
- 1649US7166762B2Method of constructing heart failure model animalTAKEDA PHARMACEUTICAL·Filed 2001·Granted Jan 23, 2007·0 cites·18 claims
- 1749US6146966AProcess for forming a capacitor incorporated in a semiconductor deviceNEC CORP·Filed 1997·Granted Nov 14, 2000·12 cites·6 claims
- 1846US10855157B2Power generation deviceALPS ALPINE CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·10 claims
- 1943US6300186B1Method of measuring semiconductor deviceNEC CORP·Filed 1996·Granted Oct 9, 2001·7 cites·6 claims
- 2042US2005031959A1Positive electrode material mixture and alkaline battery using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 2141US5227364AMethod of forming patterned oxide superconducting films and Josephson junction devices by using an aqueous alkaline solutionSANYO ELECTRIC CO·Filed 1991·Granted Jul 13, 1993·8 cites·11 claims
- 2239US7564075B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2005·Granted Jul 21, 2009·0 cites·11 claims
- 2337US8674445B2Electrostatic discharge failure protective element, electrostatic discharge failure protective circuit, semiconductor device and semiconductor device manufacturing methodFUJIWARA SHUJI·Filed 2008·Granted Mar 18, 2014·0 cites·12 claims
- 2437US2007154791A1Alkaline dry batteryADACHI MITSUJI·Filed 2004·Application pending·0 cites
- 2535US5873985AProcess of making squid device having tilt-boundary junctionSANYO ELECTRIC CO·Filed 1993·Granted Feb 23, 1999·4 cites·9 claims
- 2635US2004259385A1Method of forming insulating film improved in electric insulating propertyELPIDA MEMORY INC·Filed 2004·Application pending·0 cites
- 2733US6143619AMethod for manufacturing semiconductor device and semiconductor device manufacturing apparatusNEC CORP·Filed 1998·Granted Nov 7, 2000·6 cites·13 claims
- 2831US5952721ASemiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layerNEC CORP·Filed 1997·Granted Sep 14, 1999·2 cites·6 claims
- 2929US5500158AUO2 pellet and method for production thereofMITSUBISHI MATERIALS CORP·Filed 1994·Granted Mar 19, 1996·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →