Inventor · disambiguated record
Shin Harada
Also filed as: HARADA SHIN · HARADA SHIN-ICHI
59 granted patents·70 pending applications·259 citations·filing 2000–2022
98Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES55NISHIGUCHI TARO15HARADA SHIN14SASAKI MAKOTO12FUJIKAWA KAZUHIRO5
Top patents by PatentIndex Score
129 records- 0197US8436366B2Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor deviceHARADA SHIN·Filed 2010·Granted May 7, 2013·32 cites·14 claims
- 0291US9845549B2Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Dec 19, 2017·3 cites·9 claims
- 0390US8435866B2Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Granted May 7, 2013·11 cites·14 claims
- 0490US7750377B2Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistorsSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jul 6, 2010·15 cites·21 claims
- 0588US9856583B2Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jan 2, 2018·2 cites·8 claims
- 0680US8525187B2Insulated gate bipolar transistorHARADA SHIN·Filed 2010·Granted Sep 3, 2013·6 cites·5 claims
- 0780US8502236B2Insulated gate field effect transistorHARADA SHIN·Filed 2010·Granted Aug 6, 2013·6 cites·5 claims
- 0880US8138504B2Silicon carbide semiconductor device and method of manufacturing the sameHARADA SHIN·Filed 2007·Granted Mar 20, 2012·6 cites·6 claims
- 0980USD651992SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·26 cites·1 claims
- 1079USD651991SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Jan 10, 2012·25 cites·1 claims
- 1178US9255344B2Silicon carbide substrate and method of manufacturing the sameHARADA SHIN·Filed 2012·Granted Feb 9, 2016·3 cites·13 claims
- 1278US8450750B2Silicon carbide semiconductor device and method of manufacturing thereofHONAGA MISAKO·Filed 2010·Granted May 28, 2013·5 cites·9 claims
- 1378US6870189B1Pinch-off type vertical junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Mar 22, 2005·25 cites·19 claims
- 1477US8513673B2MOSFET and method for manufacturing MOSFETWADA KEIJI·Filed 2010·Granted Aug 20, 2013·5 cites·18 claims
- 1576US8686434B2Silicon carbide semiconductor device and method for manufacturing the sameHARADA SHIN·Filed 2009·Granted Apr 1, 2014·4 cites·14 claims
- 1675US10513799B2Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Dec 24, 2019·0 cites·4 claims
- 1775US8536583B2MOSFET and method for manufacturing MOSFETWADA KEIJI·Filed 2010·Granted Sep 17, 2013·4 cites·10 claims
- 1875US8513676B2Semiconductor device and method for manufacturing sameHARADA SHIN·Filed 2010·Granted Aug 20, 2013·3 cites·20 claims
- 1975US8168515B2Method for manufacturing semiconductor substrateSASAKI MAKOTO·Filed 2010·Granted May 1, 2012·3 cites·17 claims
- 2074USD655256SSemiconductor substrateNISHIGUCHI TARO·Filed 2010·Granted Mar 6, 2012·20 cites·1 claims
- 2173US8421086B2Silicon carbide semiconductor device and method of manufacturing the sameHARADA SHIN·Filed 2009·Granted Apr 16, 2013·5 cites·8 claims
- 2271US8198675B2Silicon carbide semiconductor device and method of manufacturing the sameHARADA SHIN·Filed 2007·Granted Jun 12, 2012·3 cites·9 claims
- 2370US7528426B2Lateral junction field-effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 5, 2009·4 cites·10 claims
- 2469US8624266B2Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor deviceHARADA SHIN·Filed 2011·Granted Jan 7, 2014·2 cites·17 claims
- 2568US2014138709A1Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 2666US10246797B2Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Apr 2, 2019·0 cites·4 claims
- 2766US8872188B2Silicon carbide semiconductor device and method of manufacturing thereofHONAGA MISAKO·Filed 2010·Granted Oct 28, 2014·2 cites·11 claims
- 2866US8697555B2Method of producing semiconductor device and semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2008·Granted Apr 15, 2014·2 cites·12 claims
- 2966US6822275B2Transverse junction field effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Nov 23, 2004·11 cites·12 claims
- 3065US9947782B2Semiconductor device and method for manufacturing sameHARADA SHIN·Filed 2010·Granted Apr 17, 2018·1 cites·11 claims
- 3164US7759211B2Method of fabricating semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Jul 20, 2010·1 cites·25 claims
- 3261US11066756B2Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jul 20, 2021·0 cites·3 claims
- 3361US7671388B2Lateral junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Mar 2, 2010·1 cites·7 claims
- 3460US7671387B2Lateral junction field effect transistor and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Mar 2, 2010·1 cites·8 claims
- 3560US7282760B2Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistorsSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Oct 16, 2007·6 cites·9 claims
- 3660US7023033B2Lateral junction field-effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Apr 4, 2006·8 cites·6 claims
- 3759US8664205B2Oil-in-water emulsion lotion containing 22-oxa-1α, 25-dihydroxyvitamin D3 and method of treatment of skin disorder using the sameHARADA SHIN-ICHI·Filed 2007·Granted Mar 4, 2014·0 cites·11 claims
- 3859US2012091472A1Silicon carbide substrateSASAKI MAKOTO·Filed 2011·Application pending·0 cites
- 3959US2010318485A1Information distribution apparatus, information distribution system, method and programNEC CORP·Filed 2009·Application pending·0 cites
- 4058US10741683B2Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 11, 2020·0 cites·12 claims
- 4157US9450054B2Dislocation in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 20, 2016·0 cites·14 claims
- 4256US9583571B2Dislocation in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 28, 2017·0 cites·14 claims
- 4356US7364978B2Method of fabricating semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Apr 29, 2008·4 cites·15 claims
- 4454US9090992B2Method of manufacturing single crystalNISHIGUCHI TARO·Filed 2010·Granted Jul 28, 2015·0 cites·22 claims
- 4554US8912550B2Dislocations in SiC semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Dec 16, 2014·0 cites·14 claims
- 4653US2014159056A1Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 4753US2014159057A1Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 4852US2013255568A1Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 4952US2013239881A1Method and device for manufacturing silicon carbide single-crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 5052US2013161647A1Ingot, substrate, and substrate groupSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
Showing the top 50 of 129 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →