Inventor · disambiguated record
Shinsuke Harada
Also filed as: HARADA SHINSUKE
71 granted patents·36 pending applications·195 citations·filing 2001–2025
98Inventor score
Top patents by PatentIndex Score
107 records- 0195US10008592B1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jun 26, 2018·16 cites·9 claims
- 0292US10243038B1Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Mar 26, 2019·8 cites·20 claims
- 0391US10199493B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Feb 5, 2019·6 cites·10 claims
- 0488US10403749B2Method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Sep 3, 2019·4 cites·6 claims
- 0584US10263105B2High voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Apr 16, 2019·4 cites·17 claims
- 0684US9653599B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted May 16, 2017·4 cites·11 claims
- 0783US11437508B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Sep 6, 2022·1 cites·2 claims
- 0882US10770581B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Sep 8, 2020·3 cites·6 claims
- 0982US8003991B2Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereofNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Aug 23, 2011·10 cites·11 claims
- 1081US11398556B2Semiconductor device, inverter circuit, drive device, vehicle, and elevatorTOSHIBA KK·Filed 2021·Granted Jul 26, 2022·1 cites·18 claims
- 1181US10522673B2Semiconductor device having a schottky barrier diodeFUJI ELECTRIC CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·7 claims
- 1280US7728336B2Silicon carbide semiconductor device and method for producing the sameNAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Jun 1, 2010·7 cites·17 claims
- 1380US7265388B2Semiconductor deviceNAT INST OF ADVANCED IND SCIEN·Filed 2004·Granted Sep 4, 2007·29 cites·18 claims
- 1480US6759684B2SiC semiconductor deviceNAT INST OF ADVANCED IND SCIEN·Filed 2001·Granted Jul 6, 2004·29 cites·34 claims
- 1579US10903351B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jan 26, 2021·2 cites·3 claims
- 1679US10622446B2Silicon carbide based power semiconductor device with low on voltage and high speed characteristicsFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 14, 2020·3 cites·7 claims
- 1779US7811874B2Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor deviceNAT INST OF ADVANCED IND SCIEN·Filed 2007·Granted Oct 12, 2010·6 cites·5 claims
- 1877US7880173B2Semiconductor device and method of manufacturing sameNAT INST OF ADVANCED IND SCIEN·Filed 2008·Granted Feb 1, 2011·7 cites·8 claims
- 1976US10304954B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted May 28, 2019·2 cites·10 claims
- 2075US12261217B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Granted Mar 25, 2025·0 cites·20 claims
- 2175US10600921B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 24, 2020·2 cites·8 claims
- 2275US10374080B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 6, 2019·2 cites·5 claims
- 2375US10186610B2Semiconductor device and method of manufacturing the semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 22, 2019·2 cites·15 claims
- 2475US9978842B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2016·Granted May 22, 2018·2 cites·10 claims
- 2574US10439060B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 8, 2019·2 cites·4 claims
- 2674US10418478B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Sep 17, 2019·2 cites·12 claims
- 2774US2025267902A1Superjunction silicon carbide semiconductor device having parallel pn column structure with crystal defectsFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 2874US2024405084A1Semiconductor device having gate electrode and interlayer insulating film provided in trenchFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 2972US10276653B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Apr 30, 2019·1 cites·5 claims
- 3071US10032866B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 24, 2018·1 cites·7 claims
- 3171US9627486B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·11 claims
- 3270US10546950B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jan 28, 2020·1 cites·17 claims
- 3369US10096680B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Oct 9, 2018·1 cites·18 claims
- 3469US10062750B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Aug 28, 2018·1 cites·4 claims
- 3569US9184230B2Silicon carbide vertical field effect transistorHARADA YUICHI·Filed 2012·Granted Nov 10, 2015·3 cites·7 claims
- 3666US10249717B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2018·Granted Apr 2, 2019·1 cites·18 claims
- 3766US9923062B2Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 20, 2018·1 cites·13 claims
- 3866US9722018B2Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2013·Granted Aug 1, 2017·1 cites·9 claims
- 3964US11852367B2Control device for air conditioning apparatus, air conditioning system, control method for air conditioning apparatus, and programDAIKIN IND LTD·Filed 2021·Granted Dec 26, 2023·0 cites·25 claims
- 4064US7538352B2Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using sameNAT INST OF ADVANCED IND SCIEN·Filed 2003·Granted May 26, 2009·8 cites·12 claims
- 4163US11996475B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted May 28, 2024·0 cites·5 claims
- 4263US9362392B2Vertical high-voltage semiconductor device and fabrication method thereofFUJI ELECTRIC CO LTD·Filed 2013·Granted Jun 7, 2016·1 cites·12 claims
- 4363US6812102B2Semiconductor device manufacturing methodNAT INST OF ADVANCED IND SCIEN·Filed 2002·Granted Nov 2, 2004·11 cites·19 claims
- 4463US2025089356A1Semiconductor deviceAIST·Filed 2024·Application pending·0 cites
- 4562US2024355885A1Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 4660US9537002B2Semiconductor device with SiC base layerFUJI ELECTRIC CO LTD·Filed 2013·Granted Jan 3, 2017·1 cites·9 claims
- 4760US2024363692A1Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 4860US2024332281A1Semiconductor deviceAIST·Filed 2024·Application pending·0 cites
- 4959US2021183995A1Superjunction silicon carbide semiconductor device and method of manufacturing superjunction silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Application pending·0 cites
- 5057US2024347587A1Superjunction silicon carbide semiconductor device and method of manufacturing superjunction silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →