Inventor · disambiguated record
Shuichi Hiza
Also filed as: HIZA SHUICHI
8 granted patents·6 pending applications·0 citations·filing 2003–2022
70Inventor score
Top patents by PatentIndex Score
14 records- 0157US2015214398A1Photovoltaic element and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2013·Application pending·0 cites
- 0255US12512648B2Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Dec 30, 2025·0 cites·8 claims
- 0353US11322322B2Insulating molded body and gas circuit breakerMITSUBISHI ELECTRIC CORP·Filed 2018·Granted May 3, 2022·0 cites·6 claims
- 0448US2024258195A1Bonded body comprising mosaic diamond wafer and semiconductor of different type, method for producing same, and mosaic diamond wafer for use in bonded body with semiconductor of different typeAIST·Filed 2022·Application pending·0 cites
- 0547US12494404B2Semiconductor device including stop islands and method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Dec 9, 2025·0 cites·14 claims
- 0647US12269107B2Method for manufacturing composite substrate, and composite substrateMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Apr 8, 2025·0 cites·12 claims
- 0746US2024096968A1Nitride semiconductor device and method for manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Application pending·0 cites
- 0845US12476165B2Nitride semiconductor device, and method of manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Nov 18, 2025·0 cites·12 claims
- 0945US11854856B2Method of manufacturing semiconductor elementMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Dec 26, 2023·0 cites·19 claims
- 1045US2024030055A1Method of manufacturing semiconductor substrate and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Application pending·0 cites
- 1142US11961765B2Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrateMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Apr 16, 2024·0 cites·10 claims
- 1242US2023120994A1Polishing method, and semiconductor substrate manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2020·Application pending·0 cites
- 1340US2012097239A1Method for roughening substrate surface, method for manufacturing photovoltaic device, and photovoltaic deviceSATO TAKEHIKO·Filed 2010·Application pending·0 cites
- 1428US6765449B2Pulse width modulation circuitONKYO KK·Filed 2003·Granted Jul 20, 2004·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →