Inventor · disambiguated record
Shu-Ya Hsu
Also filed as: HSU SHU-YA
3 granted patents·6 pending applications·34 citations·filing 2001–2003
67Inventor score
Files withMACRONIX INT CO LTD8
Top patents by PatentIndex Score
9 records- 0168US6602792B2Method for reducing stress of sidewall oxide layer of shallow trench isolationMACRONIX INT CO LTD·Filed 2001·Granted Aug 5, 2003·21 cites·19 claims
- 0259US6503815B1Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolationMACRONIX INT CO LTD·Filed 2001·Granted Jan 7, 2003·13 cites·12 claims
- 0335US2004147136A1Method for making the gate dielectric layer by oxygen radicals and hydroxyl radicals mixtureMACRONIX INT CO LTD·Filed 2003·Application pending·0 cites
- 0432US6703322B2Method of forming multiple oxide layers with different thicknesses in a linear nitrogen doping processMACRONIX INT CO LTD·Filed 2002·Granted Mar 9, 2004·0 cites·7 claims
- 0530US2003194871A1Method of stress and damage elimination during formation of isolation deviceMACRONIX INT CO LTD·Filed 2002·Application pending·0 cites
- 0630US2003194870A1Method for forming sidewall oxide layer of shallow trench isolation with reduced stress and encroachmentMACRONIX INT CO LTD·Filed 2002·Application pending·0 cites
- 0729US2003017678A1Method of reducing stress and encroachment effect of isolation device on active regionsMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 0829US2003027403A1Method for forming sacrificial oxide layerMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 0927US2004023454A1Method for utilizing re-oxidation of nitride layer to form super thin nitride gate oxide layerFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →