Inventor · disambiguated record
Shou-Yi Hsu
Also filed as: HSU SHOU-YI
24 granted patents·8 pending applications·140 citations·filing 1998–2014
95Inventor score
Top patents by PatentIndex Score
32 records- 0190US8790971B1Method of fabricating a super junction transistorANPEC ELECTRONICS CORP·Filed 2014·Granted Jul 29, 2014·8 cites·5 claims
- 0290US8748973B2Super junction transistor and fabrication method thereofLIN YUNG-FA·Filed 2012·Granted Jun 10, 2014·9 cites·18 claims
- 0390US8603879B2Method for fabricating super-junction power device with reduced miller capacitanceANPEC ELECTRONICS CORP·Filed 2013·Granted Dec 10, 2013·8 cites·11 claims
- 0489US8536004B2Method for fabricating semiconductor power deviceLIN YUNG-FA·Filed 2011·Granted Sep 17, 2013·9 cites·11 claims
- 0588US8940606B2Method for fabricating trench type power transistor deviceLIN YUNG-FA·Filed 2012·Granted Jan 27, 2015·8 cites·6 claims
- 0688US8541278B2Method for fabricating super-junction power device with reduced miller capacitanceLIN YUNG-FA·Filed 2011·Granted Sep 24, 2013·8 cites·12 claims
- 0787US8536003B2Method for fabricating semiconductor power deviceLIN YUNG-FA·Filed 2011·Granted Sep 17, 2013·8 cites·11 claims
- 0886US8466051B2Method for fabricating Schottky deviceLIN YUNG-FA·Filed 2011·Granted Jun 18, 2013·6 cites·7 claims
- 0982US8455946B2Lateral stack-type super junction power semiconductor deviceLIN YUNG-FA·Filed 2011·Granted Jun 4, 2013·5 cites·18 claims
- 1081US8404531B2Method for fabricating a power transistorLIN YUNG-FA·Filed 2012·Granted Mar 26, 2013·5 cites·14 claims
- 1180US8178410B1Method for fabricating a semiconductor power deviceLIN YUNG-FA·Filed 2011·Granted May 15, 2012·5 cites·18 claims
- 1277US8524559B2Manufacturing method of power transistor deviceLIN YUNG-FA·Filed 2012·Granted Sep 3, 2013·3 cites·10 claims
- 1375US8753937B2Manufacturing method of power transistor device with super junctionLIN YUNG-FA·Filed 2012·Granted Jun 17, 2014·3 cites·14 claims
- 1471US8492221B2Method for fabricating power semiconductor device with super junction structureLIN YUNG-FA·Filed 2012·Granted Jul 23, 2013·3 cites·10 claims
- 1566US8928070B2Trench type power transistor device with super junctionLIN YUNG-FA·Filed 2012·Granted Jan 6, 2015·1 cites·8 claims
- 1663US8357972B2Semiconductor power deviceANPEC ELECTRONICS CORP·Filed 2011·Granted Jan 22, 2013·1 cites·20 claims
- 1759US6881986B1Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS productsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 19, 2005·12 cites·16 claims
- 1857US6153517ALow resistance poly landing padTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·24 cites·25 claims
- 1954US8940607B2Manufacturing method of trench type power transistor device with super junctionANPEC ELECTRONICS CORP·Filed 2013·Granted Jan 27, 2015·0 cites·14 claims
- 2054US8754473B2Power transistor deviceANPEC ELECTRONICS CORP·Filed 2013·Granted Jun 17, 2014·0 cites·4 claims
- 2154US2014327039A1Trench type power transistor deviceANPEC ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2252US9029942B2Power transistor device with super junctionANPEC ELECTRONICS CORP·Filed 2014·Granted May 12, 2015·0 cites·8 claims
- 2352US2013307064A1Power transistor device and fabricating method thereofANPEC ELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 2451US2013252408A1Method for fabricating schottky deviceANPEC ELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 2549US2013043528A1Power transistor device and fabricating method thereofLIN YUNG-FA·Filed 2012·Application pending·0 cites
- 2648US8936990B2Manufacturing method of power transistor device with super junctionLIN YUNG-FA·Filed 2012·Granted Jan 20, 2015·0 cites·9 claims
- 2745US6071812AMethod of forming a modified metal contact opening to decrease its aspect ratio for deep sub-micron processesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 6, 2000·14 cites·18 claims
- 2840US2013203229A1Method of reducing surface doping concentration of doped diffusion region, method of manufacturing super junction using the same and method of manufacturing power transistor deviceLIN YUNG-FA·Filed 2012·Application pending·0 cites
- 2939US2012199903A1Semiconductor device having a super junctionLIN YUNG-FA·Filed 2012·Application pending·0 cites
- 3038US8890253B2Semiconductor deviceLIN YUNG-FA·Filed 2012·Granted Nov 18, 2014·0 cites·10 claims
- 3137US2012267708A1Termination structure for power devicesLIN YUNG-FA·Filed 2011·Application pending·0 cites
- 3237US2012181576A1Insulated gate bipolar transistorLIN YUNG-FA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →