Inventor · disambiguated record
Sheng-Huang Huang
Also filed as: HUANG SHENG-HUANG
57 granted patents·16 pending applications·138 citations·filing 2006–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD62PRIMAX ELECTRONICS LTD5IND TECH RES INST2LAI CHIH-HUANG2TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
73 records- 0197US10504958B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·7 cites·20 claims
- 0296US11818962B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0396US10522740B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·14 cites·17 claims
- 0495US11551736B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·4 cites·20 claims
- 0595US10790439B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
- 0695US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
- 0794US11889769B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0894US10727274B2Techniques for MRAM top electrode via connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·8 cites·20 claims
- 0994US9231191B2Magnetic tunnel junction device and method of making sameIND TECH RES INST·Filed 2013·Granted Jan 5, 2016·33 cites·8 claims
- 1093US11322543B2Method for MRAM top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 1192US11075335B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·7 cites·20 claims
- 1291US10797230B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·5 cites·20 claims
- 1390US11469372B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 1489US11005032B2Techniques for MRAM MTJ top electrode to metal layer interface including spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·4 cites·20 claims
- 1589US10727272B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·4 cites·20 claims
- 1689US2025359070A1Method for mram top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1789US2024381666A1Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1888US11121308B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
- 1987US12426274B2Method for MRAM top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 2086US12284814B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 2185US12444650B2Etch stop layer for memory device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 2285US12274182B2Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 2385US10950656B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 2484US2025316537A1Semiconductor memory device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2583US11569443B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·1 cites·20 claims
- 2683US11437433B2Techniques for MRAM top electrode via connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·1 cites·20 claims
- 2783US10686125B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 2883US2025220922A1Method for manufacturing a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2982US2025140295A1Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3082US2025234791A1Sidewall spacer structure for memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3181US12329039B2Magnetic tunnel junction structures with protection outer layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 3281US12223989B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 3381US11832529B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 3481US2025311637A1Magnetic tunnel junction structures with protection outer layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3578US11910619B2Method for MRAM top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 3678US10270026B2Multilayered spacer structure for a magnetic tunneling junction and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 3777US12274183B2Memory cell with top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3877US12027420B2Etch stop layer for memory device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3977US11189659B2Techniques for MRAM MTJ top electrode to via interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·2 cites·20 claims
- 4077US10510803B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 4176US12274072B2Semiconductor memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 4276US11723219B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 4376US2024365682A1Magnetic random access memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4476US2024381670A1Techniques for mram mtj top electrode to via interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4576US2025359485A1Magnetic tunnel junction device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4675US11678493B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·18 claims
- 4774US11316096B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 4871US12464955B2Magnetic tunnel junction device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 4970US12426514B2Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 5070US12342730B2Magnetic tunnel junction structures with protection outer layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 24, 2025·0 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →