Inventor · disambiguated record
Sheila K. Hurtt
Also filed as: HURTT SHEILA · HURTT SHEILA K
11 granted patents·6 pending applications·78 citations·filing 2005–2025
89Inventor score
Files withGOOGLE LLC7INFINERA CORP3NAGARAJAN RADHAKRISHNAN L2QORVO US INC2TRIQUINT SEMICONDUCTOR INC2
Top patents by PatentIndex Score
17 records- 0198US11637219B2Monolithic integration of different light emitting structures on a same substrateGOOGLE LLC·Filed 2020·Granted Apr 25, 2023·5 cites·47 claims
- 0295US9372306B1Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)NAGARAJAN RADHAKRISHNAN L·Filed 2005·Granted Jun 21, 2016·30 cites·54 claims
- 0394US12191418B2Monolithic integration of different light emitting structures on a same substrateGOOGLE LLC·Filed 2023·Granted Jan 7, 2025·1 cites·20 claims
- 0491US7122846B2Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)INFINERA CORP·Filed 2005·Granted Oct 17, 2006·14 cites·15 claims
- 0588US7208770B2Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)INFINERA CORP·Filed 2005·Granted Apr 24, 2007·10 cites·3 claims
- 0686US9608084B2Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistorTRIQUINT SEMICONDUCTOR INC·Filed 2015·Granted Mar 28, 2017·5 cites·8 claims
- 0781US10012797B1Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)NAGARAJAN RADHAKRISHNAN L·Filed 2005·Granted Jul 3, 2018·10 cites·100 claims
- 0880US2024413266A1Light emitting diodes with aluminum-containing layers integrated therein and associated methodsGOOGLE LLC·Filed 2024·Application pending·0 cites
- 0978US11784288B2Light-emitting diodes with integrated optical elementsGOOGLE LLC·Filed 2019·Granted Oct 10, 2023·2 cites·65 claims
- 1076US2025221102A1Monolithic integration of different light emitting structures on a same substrateGOOGLE LLC·Filed 2025·Application pending·0 cites
- 1170US2024120446A1Light-emitting diodes with integrated optical elementsGOOGLE LLC·Filed 2023·Application pending·0 cites
- 1265US2021343897A1Light emitting diodes with aluminum-containing layers integrated therein and associated methodsRAXIUM INC·Filed 2021·Application pending·0 cites
- 1363US9231088B2Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted Jan 5, 2016·1 cites·12 claims
- 1459US2023163238A1Quantum well-based led structure enhanced with sidewall hole injectionGOOGLE LLC·Filed 2023·Application pending·0 cites
- 1543US2008044128A1TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICsINFINERA CORP·Filed 2007·Application pending·0 cites
- 1637US9923088B2Semiconductor device with vertically integrated pHEMTsQORVO US INC·Filed 2016·Granted Mar 20, 2018·0 cites·28 claims
- 1733US10720428B2High bandgap Schottky contact layer deviceQORVO US INC·Filed 2016·Granted Jul 21, 2020·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →