Inventor · disambiguated record
Shinpei Iijima
Also filed as: IIJIMA SHINPEI
32 granted patents·9 pending applications·877 citations·filing 1987–2012
97Inventor score
Files withHITACHI LTD19ELPIDA MEMORY INC12FUJIMOTO HIROYUKI2TEXAS INSTRUMENTS INC2RENESAS TECH CORP1
Top patents by PatentIndex Score
41 records- 0199US6294420B1Integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 25, 2001·381 cites·15 claims
- 0294US7074669B2Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the sameELPIDA MEMORY INC·Filed 2003·Granted Jul 11, 2006·90 cites·5 claims
- 0389US5091761ASemiconductor device having an arrangement of IGFETs and capacitors stacked thereoverHITACHI LTD·Filed 1989·Granted Feb 25, 1992·70 cites·42 claims
- 0485US6235572B1Method of making a memory cell having two layered tantalum oxide filmsHITACHI LTD·Filed 1999·Granted May 22, 2001·66 cites·12 claims
- 0583US7382014B2Semiconductor device with capacitor suppressing leak currentELPIDA MEMORY INC·Filed 2006·Granted Jun 3, 2008·8 cites·9 claims
- 0680US6653676B2Integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 25, 2003·24 cites·5 claims
- 0779US4785342AStatic random access memory having structure of first-, second- and third-level conductive filmsHITACHI LTD·Filed 1987·Granted Nov 15, 1988·38 cites·22 claims
- 0875US8492814B2Semiconductor device and method of manufacturing the sameFUJIMOTO HIROYUKI·Filed 2012·Granted Jul 23, 2013·3 cites·9 claims
- 0973US6534375B2Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing stepsHITACHI LTD·Filed 2001·Granted Mar 18, 2003·14 cites·27 claims
- 1070US6720603B2Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layerHITACHI LTD·Filed 2002·Granted Apr 13, 2004·11 cites·16 claims
- 1169US6649465B2Process for manufacturing a semiconductor memory device including a memory cell selecting transistor and a capacitor with metal electrodesHITACHI LTD·Filed 2001·Granted Nov 18, 2003·11 cites·17 claims
- 1268US8278172B2Semiconductor device and method of manufacturing the sameFUJIMOTO HIROYUKI·Filed 2010·Granted Oct 2, 2012·2 cites·15 claims
- 1368US7498601B2Phase-change memory device and method of manufacturing sameELPIDA MEMORY INC·Filed 2006·Granted Mar 3, 2009·4 cites·16 claims
- 1467US7700942B2Semiconductor device including an embedded contact plugELPIDA MEMORY INC·Filed 2008·Granted Apr 20, 2010·3 cites·8 claims
- 1567US6632721B1Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grainsHITACHI LTD·Filed 2000·Granted Oct 14, 2003·13 cites·20 claims
- 1666US7071071B2Method of manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2004·Granted Jul 4, 2006·14 cites·1 claims
- 1764US7811895B2Method of manufacturing a semiconductor device having a stacked capacitorELPIDA MEMORY INC·Filed 2009·Granted Oct 12, 2010·1 cites·6 claims
- 1864US6576946B1Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrateHITACHI LTD·Filed 1999·Granted Jun 10, 2003·24 cites·6 claims
- 1963US6544834B1Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5)HITACHI LTD·Filed 1999·Granted Apr 8, 2003·26 cites·32 claims
- 2060US7259058B2Fabricating method of semiconductor integrated circuitsRENESAS TECHONOLOGY CORP·Filed 2001·Granted Aug 21, 2007·8 cites·29 claims
- 2157US6781172B2Semiconductor device with adhesion-improvement capacitor and process for producing the deviceHITACHI LTD·Filed 2001·Granted Aug 24, 2004·6 cites·10 claims
- 2257US6423593B1Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 2001·Granted Jul 23, 2002·6 cites·2 claims
- 2357US6103566AMethod for manufacturing semiconductor integrated circuit device having a titanium electrodeHITACHI LTD·Filed 1996·Granted Aug 15, 2000·22 cites·18 claims
- 2456US6664157B2Semiconductor integrated circuit device and the method of producing the sameHITACHI LTD·Filed 2001·Granted Dec 16, 2003·7 cites·32 claims
- 2555US6544835B2Method of forming a ruthenium film by CVDHITACHI LTD·Filed 2002·Granted Apr 8, 2003·5 cites·5 claims
- 2652US7183170B2Manufacturing method of semiconductor deviceELPIDA MEMORY INC·Filed 2004·Granted Feb 27, 2007·3 cites·21 claims
- 2751US6713343B2Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectricHITACHI LTD·Filed 2003·Granted Mar 30, 2004·3 cites·28 claims
- 2851US2009197384A1Semiconductor memory device and method for manufacturing semiconductor memory deviceELPIDA MEMORY INC·Filed 2009·Application pending·0 cites
- 2949US2006102983A1Semiconductor device having a stacked capacitorELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 3046US6723612B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECHNOLOGY CORPROATION·Filed 2003·Granted Apr 20, 2004·4 cites·20 claims
- 3146US2006234510A1Semiconductor memory device and method for manufacturing semiconductor memory deviceELPIDA MEMORY INC·Filed 2006·Application pending·0 cites
- 3245US4989056ASemiconductor capacitorHITACHI LTD·Filed 1989·Granted Jan 29, 1991·9 cites·23 claims
- 3344US7667257B2Capacitor and process for manufacturing the sameELPIDA MEMORY INC·Filed 2006·Granted Feb 23, 2010·0 cites·11 claims
- 3443US6724034B2Semiconductor integrated circuit device and manufacturing method which avoids oxidation of silicon plug during thermal treatment of capacitor insulating filmRENESAS TECH CORP·Filed 2002·Granted Apr 20, 2004·1 cites·17 claims
- 3542US2003173614A1Semiconductor integrated circuit device and manufacturing method thereofHITACHI LTD·Filed 2003·Application pending·0 cites
- 3642US2003141533A1Semiconductor integrated circuit device and manufacturing method thereofHITACHI LTD·Filed 2003·Application pending·0 cites
- 3740US6927439B2Semiconductor memory with strongly adhesive electrodeHITACHI LTD·Filed 2004·Granted Aug 9, 2005·0 cites·6 claims
- 3839US2003041803A1Semiconductor device, a method of manufacturing the semiconductor device, and an apparatus for manufacturing the semiconductor deviceFiled 2002·Application pending·0 cites
- 3938US2001029113A1Semiconductor device, a method of manufacturing the semiconductor device, and an apparatus for manufacturing the semiconductor deviceFiled 2001·Application pending·0 cites
- 4037US2006086961A1Semiconductor device having a stacked capacitorELPIDA MEMORY INC·Filed 2005·Application pending·0 cites
- 4135US2004171241A1Semiconductor device having gate electrode of polymetal gate structure processed by side nitriding in anmonia atmosphereFiled 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Shinpei Iijima files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →