Inventor · disambiguated record
Shuji Ikeda
Also filed as: IKEDA SHUJI
148 granted patents·20 pending applications·3,560 citations·filing 1977–2020
99Inventor score
Top patents by PatentIndex Score
168 records- 0199US7598558B2Method of manufacturing semiconductor integrated circuit device having capacitor elementRENESAS TECH CORP·Filed 2007·Granted Oct 6, 2009·105 cites·6 claims
- 0298US7067864B2SRAM having an improved capacitorRENESAS TECH CORP·Filed 2001·Granted Jun 27, 2006·146 cites·40 claims
- 0398US6677649B2SRAM cells with two P-well structureHITACHI LTD·Filed 2000·Granted Jan 13, 2004·201 cites·7 claims
- 0498US6090684AMethod for manufacturing semiconductor deviceHITACHI LTD·Filed 1999·Granted Jul 18, 2000·283 cites·3 claims
- 0598US5834851ASRAM having load transistor formed above driver transistorHITACHI LTD·Filed 1995·Granted Nov 10, 1998·235 cites·24 claims
- 0697US6809399B2Semiconductor integrated circuit device and process for manufacturing the sameRENESAS TECH CORP·Filed 2002·Granted Oct 26, 2004·109 cites·10 claims
- 0797US4768076ARecrystallized CMOS with different crystal planesHITACHI LTD·Filed 1985·Granted Aug 30, 1988·174 cites·12 claims
- 0895US10261066B2Nano-gap electrode pair and method of manufacturing sameQUANTUM BIOSYSTEMS INC·Filed 2016·Granted Apr 16, 2019·11 cites·20 claims
- 0995US6982465B2Semiconductor device with CMOS-field-effect transistors having improved drain current characteristicsRENESAS TECH CORP·Filed 2001·Granted Jan 3, 2006·121 cites·16 claims
- 1095US6569742B1Method of manufacturing semiconductor integrated circuit device having silicide layersHITACHI LTD·Filed 1999·Granted May 27, 2003·125 cites·36 claims
- 1194US10466228B2Nano-gap electrode pair and method of manufacturing sameQUANTUM BIOSYSTEMS INC·Filed 2018·Granted Nov 5, 2019·4 cites·20 claims
- 1294US5543652ASemiconductor device having a two-channel MISFET arrangement defined by I-V characteristic having a negative resistance curve and SRAM cells employing the sameHITACHI LTD·Filed 1993·Granted Aug 6, 1996·134 cites·13 claims
- 1394US5239196ASRAM with dual word lines overlapping drive transistor gatesIKEDA SHUJI·Filed 1991·Granted Aug 24, 1993·101 cites·11 claims
- 1492US7910427B1Semiconductor integrated circuit device and process for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Mar 22, 2011·8 cites·7 claims
- 1591US4234466AProcess for preparation of solid pigment resin dispersionNIPPON PAINT CO LTD·Filed 1977·Granted Nov 18, 1980·61 cites·14 claims
- 1690US8383792B2Compound having structure derived from mononucleoside or mononucleotide, nucleic acid, labeling substance, and method and kit for detection of nucleic acidRIKEN·Filed 2008·Granted Feb 26, 2013·18 cites·21 claims
- 1789US6528848B1Semiconductor device and a method of manufacturing the sameHITACHI LTD·Filed 2000·Granted Mar 4, 2003·35 cites·50 claims
- 1888US7456486B2Semiconductor integrated circuit device and process for manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Nov 25, 2008·8 cites·19 claims
- 1988US7253051B2Semiconductor integrated circuit device and process for manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Aug 7, 2007·8 cites·17 claims
- 2088US6686274B1Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production processRENESAS TECH CORP·Filed 1999·Granted Feb 3, 2004·63 cites·13 claims
- 2186US7166893B2Semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2002·Granted Jan 23, 2007·24 cites·46 claims
- 2286US6605842B2Semiconductor device and a method of manufacturing the sameHITACHI LTD·Filed 2002·Granted Aug 12, 2003·26 cites·9 claims
- 2386US6548885B2Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 2001·Granted Apr 15, 2003·22 cites·43 claims
- 2486US6489648B2Semiconductor deviceHITACHI LTD·Filed 2001·Granted Dec 3, 2002·29 cites·2 claims
- 2585US5780910ASRAM with stacked capacitor spaced from gate electrodesHITACHI LTD·Filed 1996·Granted Jul 14, 1998·44 cites·38 claims
- 2684US6737712B2Method of manufacturing semiconductor integrated circuit device having capacitor elementHITACHI LTD·Filed 2002·Granted May 18, 2004·21 cites·21 claims
- 2784US5444012AMethod for manufacturing semiconductor integrated circuit device having a fuse elementHITACHI LTD·Filed 1994·Granted Aug 22, 1995·84 cites·12 claims
- 2883US6559027B2Semiconductor device and process for producing the smeHITACHI LTD·Filed 2001·Granted May 6, 2003·26 cites·7 claims
- 2983US5754467ASemiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 1995·Granted May 19, 1998·38 cites·34 claims
- 3082US5946565ASemiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 1997·Granted Aug 31, 1999·34 cites·58 claims
- 3181US10438811B1Methods for forming nano-gap electrodes for use in nanosensorsQUANTUM BIOSYSTEMS INC·Filed 2015·Granted Oct 8, 2019·3 cites·17 claims
- 3281US7608899B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Oct 27, 2009·5 cites·5 claims
- 3381US7049680B2Semiconductor integrated circuit device and process for manufacturing the sameRENESAS TECH CORP·Filed 2004·Granted May 23, 2006·14 cites·20 claims
- 3481US6576512B2Method of manufacturing an EEPROM deviceHITACHI LTD·Filed 2002·Granted Jun 10, 2003·16 cites·8 claims
- 3580US7612417B2Semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2005·Granted Nov 3, 2009·10 cites·11 claims
- 3680US6960832B2Semiconductor device and its production processRENESAS TECH CORP·Filed 2004·Granted Nov 1, 2005·22 cites·9 claims
- 3780US5005068ASemiconductor memory deviceHITACHI LTD·Filed 1989·Granted Apr 2, 1991·39 cites·45 claims
- 3880US4774203AMethod for making static random-access memory deviceHITACHI LTD·Filed 1986·Granted Sep 27, 1988·45 cites·5 claims
- 3979US5731219AProcess for fabricating a semiconductor integrated circuit deviceHITACHI LTD·Filed 1995·Granted Mar 24, 1998·28 cites·25 claims
- 4079US5396100ASemiconductor integrated circuit device having a compact arrangement of SRAM cellsHITACHI LTD·Filed 1992·Granted Mar 7, 1995·48 cites·30 claims
- 4178US6387744B2Process for manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted May 14, 2002·23 cites·33 claims
- 4277US6686108B2Fabrication method of semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2001·Granted Feb 3, 2004·17 cites·27 claims
- 4377US4890148ASemiconductor memory cell device with thick insulative layerHITACHI LTD·Filed 1988·Granted Dec 26, 1989·49 cites·17 claims
- 4475US8482083B2Semiconductor integrated circuit device including SRAM memory cells having two P-channel MOS transistors and four N-channel MOS transistors and with four wiring layers serving as their gate electrodesOSADA KENICHI·Filed 2010·Granted Jul 9, 2013·4 cites·40 claims
- 4575US5034797ASemiconductor memory devices having stacked polycrystalline silicon transistorsHITACHI LTD·Filed 1990·Granted Jul 23, 1991·40 cites·31 claims
- 4674US8482058B2Semiconductor device including a power MISFETHOSHINO YUTAKA·Filed 2012·Granted Jul 9, 2013·2 cites·6 claims
- 4774US7358578B2Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiringRENESAS TECH CORP·Filed 2002·Granted Apr 15, 2008·12 cites·8 claims
- 4874US6031288ASemiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereofHITACHI LTD·Filed 1996·Granted Feb 29, 2000·36 cites·49 claims
- 4973US7511377B2Semiconductor integrated circuit device and process for manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Mar 31, 2009·2 cites·36 claims
- 5073US7135732B2Semiconductor deviceHITACHI LTD·Filed 2002·Granted Nov 14, 2006·13 cites·6 claims
Showing the top 50 of 168 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →