Inventor · disambiguated record
Shinichiroh Ikemasu
Also filed as: IKEMASU SHINICHIROH
19 granted patents·1 pending application·168 citations·filing 1997–2008
95Inventor score
Top patents by PatentIndex Score
20 records- 0183US7420860B2Semiconductor memory having a dummy signal line connected to dummy memory cellFUJITSU LTD·Filed 2007·Granted Sep 2, 2008·13 cites·15 claims
- 0280US7411257B2Semiconductor device having guard ring and manufacturing method thereofFUJITSU LTD·Filed 2006·Granted Aug 12, 2008·8 cites·7 claims
- 0378US6624525B2Contact plug in capacitor deviceFUJITSU LTD·Filed 2002·Granted Sep 23, 2003·19 cites·6 claims
- 0474US6410423B1Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2000·Granted Jun 25, 2002·15 cites·15 claims
- 0571US6384441B1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2000·Granted May 7, 2002·12 cites·13 claims
- 0666US6475858B2Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2002·Granted Nov 5, 2002·9 cites·11 claims
- 0765US6344692B1Highly integrated and reliable DRAM adapted for self-aligned contactFUJITSU LTD·Filed 1997·Granted Feb 5, 2002·21 cites·9 claims
- 0863US7132720B2Semiconductor device having guard ring and manufacturing method thereofFUJITSU LTD·Filed 2003·Granted Nov 7, 2006·10 cites·22 claims
- 0959US7184333B2Semiconductor memory having a dummy signal line connected to dummy memory cellFUJITSU LTD·Filed 2004·Granted Feb 27, 2007·9 cites·9 claims
- 1057US5780907ASemiconductor device having triple wellsFUJITSU LTD·Filed 1997·Granted Jul 14, 1998·20 cites·6 claims
- 1151US7649261B2Highly integrated and reliable DRAM and its manufactureFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 19, 2010·0 cites·46 claims
- 1250US6309921B1Semiconductor device and method for fabricating semiconductor deviceFUJITSU LTD·Filed 1997·Granted Oct 30, 2001·15 cites·14 claims
- 1349US6930347B2Semiconductor memory device having electrical connection by side contactFUJITSU LTD·Filed 2002·Granted Aug 16, 2005·2 cites·108 claims
- 1449US2007023812A1Highly integrated and reliable DRAM and its manufactureFUJITSU LTD·Filed 2006·Application pending·0 cites
- 1547US8143723B2Highly integrated and reliable DRAM and its manufactureIKEMASU SHINICHIROH·Filed 2008·Granted Mar 27, 2012·0 cites·20 claims
- 1646US7372157B2Semiconductor device including titanium wires and manufacturing method thereforFUJITSU LTD·Filed 2002·Granted May 13, 2008·2 cites·13 claims
- 1746US6004842AMethod of making a DRAM with a transfer transistorFUJITSU LTD·Filed 1998·Granted Dec 21, 1999·10 cites·25 claims
- 1845US7145242B2Highly integrated and reliable DRAMFUJITSU LTD·Filed 2004·Granted Dec 5, 2006·1 cites·20 claims
- 1945US6818993B2Insulation structure for wiring which is suitable for self-aligned contact and multilevel wiringFUJITSU LTD·Filed 2001·Granted Nov 16, 2004·1 cites·34 claims
- 2043US7238608B2Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2003·Granted Jul 3, 2007·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →