Inventor · disambiguated record
Shu-Uei Jang
Also filed as: JANG SHU-UEI
30 granted patents·17 pending applications·38 citations·filing 2017–2025
95Inventor score
Top patents by PatentIndex Score
47 records- 0197US11251284B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·4 cites·20 claims
- 0296US11329140B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·4 cites·20 claims
- 0395US11996466B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0494US11855179B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0593US10276449B1Method for forming fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 0688US11437287B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·18 claims
- 0788US10714347B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 0888US10515952B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·4 cites·20 claims
- 0987US11923359B2Method for forming fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
- 1085US11508582B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·1 cites·21 claims
- 1183US12363999B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1283US2025318232A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US12363976B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1482US12206011B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1582US10879074B2Method of forming semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·1 cites·20 claims
- 1682US2025331295A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US2025301771A1Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US2024363735A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1982US2024421211A1Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2081US12389664B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 2181US11990341B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2281US10861746B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 2381US2024178224A1Method for forming fin field effect transistor (finfet) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2480US12046663B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2580US2025072101A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2678US11063043B2Method for forming fin field effect transistor (FinFet) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·20 claims
- 2777US2024290869A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2875US11894277B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 2975US11757019B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 3074US11626510B2Fin Field-Effect Transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 11, 2023·0 cites·20 claims
- 3173US12170229B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 3271US2023386932A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3370US11233139B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·10 claims
- 3468US12046597B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 3568US11848240B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·0 cites·20 claims
- 3667US11527445B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 3765US2025366085A1Metal gate isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3864US11967533B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 3960US2025324727A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4060US2025301744A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4159US2025169090A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4257US10672613B2Method of forming semiconductor structure and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 4357US2023197521A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4456US2025063790A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4554US2024387283A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LIMITED·Filed 2024·Application pending·0 cites
- 4652US2024047458A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4742US12107013B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LIMITED·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →