Inventor · disambiguated record

Shiu-Ko Jangjian

Also filed as: JANGJIAN SHIU-KO

160 granted patents·15 pending applications·439 citations·filing 2003–2025

99Inventor score

Technology areasH10P H10W H10D H10F H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD135 TAIWAN SEMICONDUCTOR MFG16 JANGJIAN SHIU-KO15 HSIEH PING-PANG1 Hong min hao1

Top patents by PatentIndex Score

175 records

0198US9876114B2Structure and method for 3D FinFET metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·61 cites·20 claims
0298US9620610B1FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·22 cites·19 claims
0397US9257476B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 9, 2016·11 cites·20 claims
0497US9219092B2Grids in backside illumination image sensor chips and methods for forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted Dec 22, 2015·24 cites·20 claims
0596US10367021B2Image sensor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 30, 2019·12 cites·20 claims
0696US9478581B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 25, 2016·9 cites·20 claims
0796US9437484B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·28 cites·20 claims
0895US9337192B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·13 cites·18 claims
0994US10998415B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·7 cites·20 claims
1094US9837306B2Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·9 cites·20 claims
1194US9728646B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·19 claims
1294US9691766B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·16 cites·13 claims
1393US10090242B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 2, 2018·8 cites·20 claims
1493US10090206B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 2, 2018·6 cites·20 claims
1593US9024369B2Metal shield structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·8 cites·20 claims
1692US10014224B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 3, 2018·5 cites·20 claims
1792US8907385B2Surface treatment for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 9, 2014·7 cites·13 claims
1891US9490365B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·7 cites·20 claims
1991US9406675B1FinFET structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·7 cites·20 claims
2091US2025366087A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2190US10340192B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·5 cites·20 claims
2290US10192988B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 29, 2019·4 cites·20 claims
2390US9466494B2Selective growth for high-aspect ration metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·8 cites·20 claims
2489US10020401B2Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 10, 2018·4 cites·20 claims
2589US9502538B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·8 cites·20 claims
2688US11522001B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
2788US10629708B2Semiconductor device structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
2888US9041140B2Grids in backside illumination image sensor chips and methods for forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted May 26, 2015·4 cites·19 claims
2988US2024363439A1Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3087US9824929B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·4 cites·20 claims
3187US9721883B1Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·6 cites·18 claims
3286US11929328B2Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
3386US11551979B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
3486US2025287637A1Flat sti surface for gate oxide uniformity in fin fet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3585US10510588B2Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·3 cites·20 claims
3685US9397129B2Dielectric film for image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·3 cites·20 claims
3785US8294202B2Metal gate structure of a semiconductor deviceJANGJIAN SHIU-KO·Filed 2010·Granted Oct 23, 2012·8 cites·21 claims
3884US9941376B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·3 cites·20 claims
3984US9640456B2Support structure for integrated circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 2, 2017·5 cites·20 claims
4084US8890273B2Methods and apparatus for an improved reflectivity optical grid for image sensorsJANGJIAN SHIU-KO·Filed 2012·Granted Nov 18, 2014·3 cites·15 claims
4184US8772899B2Method and apparatus for backside illumination sensorJANGJIAN SHIU-KO·Filed 2012·Granted Jul 8, 2014·3 cites·20 claims
4284US2024297079A1Semiconductor device having planar transistor and finfetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4383US11257953B2Selective growth for high-aspect ratio metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·2 cites·20 claims
4483US10886226B2Conductive contact having staircase barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
4583US9548329B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·6 cites·20 claims
4683US9337303B2Metal gate stack having TiAICN as work function layer and/or blocking/wetting layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·6 cites·20 claims
4783US2024379557A1Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4882US12272708B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
4982US10658252B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·2 cites·20 claims
5082US10269664B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims

Showing the top 50 of 175 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Shiu-Ko Jangjian files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →