Inventor · disambiguated record
Shwang-Ming Jeng
Also filed as: JENG SHWANG-MING
38 granted patents·7 pending applications·350 citations·filing 2000–2024
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG21TAIWAN SEMICONDUCTOR MFG CO LTD7KO CHUNG-CHI3LIOU JOUNG-WEI2WANG KUAN-CHEN2
Top patents by PatentIndex Score
45 records- 0195US11664268B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0294US10510580B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
- 0394US6319809B1Method to reduce via poison in low-k Cu dual damascene by UV-treatmentTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2000·Granted Nov 20, 2001·97 cites·23 claims
- 0489US6846756B2Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 25, 2005·39 cites·20 claims
- 0586US6372661B1Method to improve the crack resistance of CVD low-k dielectric constant materialTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 16, 2002·60 cites·32 claims
- 0685US7365026B2CxHy sacrificial layer for cu/low-k interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 29, 2008·10 cites·18 claims
- 0785US6753260B1Composite etching stop in semiconductor process integrationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·29 cites·26 claims
- 0883US7723226B2Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratioTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 25, 2010·11 cites·19 claims
- 0982US11069558B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·20 claims
- 1081US6657284B1Graded dielectric layer and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 2, 2003·24 cites·8 claims
- 1178US7626245B2Extreme low-k dielectric film scheme for advanced interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Dec 1, 2009·7 cites·20 claims
- 1278US6821905B2Method for avoiding carbon and nitrogen contamination of a dielectric insulating layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 23, 2004·24 cites·25 claims
- 1375US12154822B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 1475US2024387240A1Dummy Fin Structures and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1574US7805692B2Method for local hot spot fixingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 28, 2010·7 cites·19 claims
- 1672US7646097B2Bond pads and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 12, 2010·6 cites·7 claims
- 1770US9589856B2Automatically adjusting baking process for low-k dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·1 cites·20 claims
- 1870US7485949B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 3, 2009·4 cites·17 claims
- 1968US8993435B2Low-k Cu barriers in damascene interconnect structuresWANG KUAN-CHEN·Filed 2010·Granted Mar 31, 2015·3 cites·18 claims
- 2068USRE42514EExtreme low-K dielectric film scheme for advanced interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jul 5, 2011·2 cites·20 claims
- 2166US7465676B2Method for forming dielectric film to improve adhesion of low-k filmTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 16, 2008·3 cites·23 claims
- 2265US8481412B2Method of and apparatus for active energy assist bakingKO CHUNG-CHI·Filed 2010·Granted Jul 9, 2013·1 cites·20 claims
- 2358US8673783B2Metal conductor chemical mechanical polishKANG HUANG SOON·Filed 2010·Granted Mar 18, 2014·1 cites·14 claims
- 2456US10144109B2Polisher, polishing tool, and polishing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 4, 2018·0 cites·20 claims
- 2556US9004914B2Method of and apparatus for active energy assist bakingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·0 cites·20 claims
- 2655US9368452B2Metal conductor chemical mechanical polishTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 14, 2016·0 cites·20 claims
- 2753USRE41935EMethod for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 16, 2010·0 cites·43 claims
- 2850US8877083B2Surface treatment in the formation of interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·0 cites·20 claims
- 2950US8853858B2Curing low-k dielectrics for improving mechanical strengthLIOU JOUNG-WEI·Filed 2012·Granted Oct 7, 2014·0 cites·22 claims
- 3050US8324731B2Integrated circuit deviceYU CHEN-HUA·Filed 2009·Granted Dec 4, 2012·0 cites·7 claims
- 3150US8258629B2Curing low-k dielectrics for improving mechanical strengthLIOU JOUNG-WEI·Filed 2008·Granted Sep 4, 2012·0 cites·15 claims
- 3250US7042049B2Composite etching stop in semiconductor process integrationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 9, 2006·2 cites·20 claims
- 3350US6620745B2Method for forming a blocking layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 16, 2003·4 cites·20 claims
- 3449US8105947B2Post etch dielectric film re-capping layerJENG SHWANG-MING·Filed 2009·Granted Jan 31, 2012·1 cites·17 claims
- 3547US2009258487A1Method for Improving the Reliability of Low-k Dielectric MaterialsLIN KENG-CHU·Filed 2008·Application pending·0 cites
- 3646US9196551B2Automatically adjusting baking process for low-k dielectric materialCHOU CHIA-CHENG·Filed 2011·Granted Nov 24, 2015·0 cites·19 claims
- 3744US6869836B1ILD stack with improved CMP resultsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 22, 2005·2 cites·23 claims
- 3843US2008188074A1Peeling-free porous capping materialCHEN I-I·Filed 2007·Application pending·0 cites
- 3942US9087877B2Low-k interconnect structures with reduced RC delayKO CHUNG-CHI·Filed 2006·Granted Jul 21, 2015·0 cites·15 claims
- 4040US10312107B2Forming interconnect structure using plasma treated metal hard maskKO CHUNG CHI·Filed 2011·Granted Jun 4, 2019·0 cites·20 claims
- 4140US2006157776A1System and method for contact module processingCHANG CHENG-HUNG·Filed 2005·Application pending·0 cites
- 4237US2005253268A1Method and structure for improving adhesion between intermetal dielectric layer and cap layerHSU SHAO-TA·Filed 2004·Application pending·0 cites
- 4336US2003205822A1Low-strength plasma treatment for interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 4434US2008116578A1Initiation layer for reducing stress transition due to curingWANG KUAN-CHEN·Filed 2006·Application pending·0 cites
- 4532US8703612B2Process for forming contact plugsSUEN SHICH-CHANG·Filed 2011·Granted Apr 22, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →