Inventor · disambiguated record

Shi Ning Ju

Also filed as: JU SHI NING

243 granted patents·116 pending applications·816 citations·filing 2012–2025

99Inventor score

Technology areasH10D H10P H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD351 TAIWAN SEMICONDUCTOR MFG6 CHING KUO-CHENG1 TAIWAN SEMICONDUCTOR MFG C LTD1

Top patents by PatentIndex Score

359 records

0199US11462612B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 4, 2022·6 cites·20 claims
0299US11362213B2Method for manufacturing a FinFET device with a backside power rail and a backside self-aligned via by etching an extended source trenchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·8 cites·20 claims
0399US11355601B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·14 cites·20 claims
0499US11289606B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·15 cites·20 claims
0598US11961915B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·4 cites·20 claims
0698US11948973B2Gate-all-around field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·4 cites·20 claims
0798US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
0898US11798944B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·4 cites·20 claims
0998US11616062B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·7 cites·20 claims
1098US11527534B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
1198US11502187B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·3 cites·20 claims
1298US11444170B1Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·5 cites·20 claims
1398US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
1498US11296081B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·4 cites·20 claims
1598US11264327B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·10 cites·20 claims
1698US11222948B2Semiconductor structure and method of fabricating the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
1798US10026737B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 17, 2018·17 cites·20 claims
1898US8633516B1Source/drain stack stressor for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 21, 2014·200 cites·20 claims
1997US12033899B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·2 cites·20 claims
2097US11996410B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
2197US11855079B2Integrated circuit with backside trench for metal gate definitionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
2297US11756958B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
2397US11450665B2Semiconductor structure with self-aligned backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·4 cites·20 claims
2497US11387181B2Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
2597US11328963B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·3 cites·20 claims
2697US11031292B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·16 cites·20 claims
2797US10833003B1Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·14 cites·20 claims
2897US8680576B2CMOS device and method of forming the sameCHING KUO-CHENG·Filed 2012·Granted Mar 25, 2014·198 cites·19 claims
2996US12272690B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·2 cites·20 claims
3096US12040371B2Multi-layer channel structures and methods of fabricating the same in field-effect transistors preliminary classTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·2 cites·20 claims
3196US12021123B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
3296US11916125B2Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
3396US11855078B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
3496US11842965B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
3596US11664454B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
3696US11637042B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
3796US10998238B2Integrated circuits with buried interconnect conductorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·11 cites·7 claims
3896US10943830B2Self-aligned structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 9, 2021·13 cites·20 claims
3996US10910375B2Semiconductor device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·8 cites·20 claims
4096US10872818B2Buried power rail and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·15 cites·20 claims
4196US10510874B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·9 cites·20 claims
4295US11817504B2Isolation structures and methods of forming the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
4395US11581415B2Multi-layer channel structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
4495US11522074B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·2 cites·20 claims
4595US11456217B2Integrated circuits with buried interconnect conductorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 27, 2022·2 cites·20 claims
4695US10720503B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·8 cites·20 claims
4795US9281378B2Fin recess last process for FinFET fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 8, 2016·16 cites·20 claims
4895US8889497B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 18, 2014·22 cites·20 claims
4994US12300723B2Transistor including downward extending silicideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·2 cites·20 claims
5094US11710737B2Hybrid semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims

Showing the top 50 of 359 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →