Inventor · disambiguated record
Shuichi Kameyama
Also filed as: KAMEYAMA SHUICHI
30 granted patents·926 citations·filing 1981–2009
98Inventor score
Top patents by PatentIndex Score
30 records- 0197US4472240AMethod for manufacturing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Sep 18, 1984·165 cites·13 claims
- 0295US7425151B2Connector, printed circuit board, connecting device connecting them, and method of testing electronic part, using themFUJITSU LTD·Filed 2007·Granted Sep 16, 2008·23 cites·5 claims
- 0393US4897368AMethod of fabricating a polycidegate employing nitrogen/oxygen implantationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Jan 30, 1990·106 cites·21 claims
- 0486US7628645B2Connector, printed circuit board, connecting device connecting them, and method of testing electronic part, using themFUJITSU LTD·Filed 2008·Granted Dec 8, 2009·9 cites·2 claims
- 0583US5320974AMethod for making semiconductor transistor device by implanting punch through stoppersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jun 14, 1994·87 cites·7 claims
- 0682US7134909B2Connector circuit boardFUJITSU LTD·Filed 2004·Granted Nov 14, 2006·20 cites·8 claims
- 0772US5034791AField effect semiconductor device and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Jul 23, 1991·34 cites·18 claims
- 0871US4433470AMethod for manufacturing semiconductor device utilizing selective etching and diffusionTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 28, 1984·35 cites·9 claims
- 0969US5158903AMethod for producing a field-effect type semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Oct 27, 1992·47 cites·3 claims
- 1069US4910572ASemiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1986·Granted Mar 20, 1990·34 cites·13 claims
- 1169US4615104AMethod of forming isolation regions containing conductive patterns thereinTOKYO SHIBAURA ELECTRIC CO·Filed 1985·Granted Oct 7, 1986·27 cites·3 claims
- 1268US4551911AMethod for manufacturing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Nov 12, 1985·28 cites·12 claims
- 1367US5202277AMethod of fabricating a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Apr 13, 1993·27 cites·25 claims
- 1465US5436176AMethod for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Jul 25, 1995·38 cites·11 claims
- 1562US7914325B2Connector, printed circuit board, connecting device connecting them, and method of testing electronic part, using themFUJITSU LTD·Filed 2009·Granted Mar 29, 2011·2 cites·1 claims
- 1662US5270227AMethod for fabrication of semiconductor device utilizing ion implantation to eliminate defectsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Dec 14, 1993·34 cites·7 claims
- 1760US5296388AFabrication method for semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Mar 22, 1994·32 cites·11 claims
- 1860US5077227ASemiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Dec 31, 1991·21 cites·7 claims
- 1960US5045493ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Sep 3, 1991·20 cites·10 claims
- 2058US5236851AMethod for fabricating semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Aug 17, 1993·20 cites·3 claims
- 2158US4445967AMethod for manufacturing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted May 1, 1984·20 cites·13 claims
- 2255US5183768AMethod of fabricating semiconductor device by forming doped regions that limit width of the baseMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Feb 2, 1993·25 cites·5 claims
- 2352US5254485AMethod for manufacturing bipolar semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Oct 19, 1993·14 cites·11 claims
- 2452US5116770AMethod for fabricating bipolar semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted May 26, 1992·14 cites·8 claims
- 2552US4532701AMethod of manufacturing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Aug 6, 1985·11 cites·9 claims
- 2647US7096396B2Test system for circuitsFUJITSU LTD·Filed 2003·Granted Aug 22, 2006·4 cites·19 claims
- 2747US4839302AMethod for fabricating bipolar semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Jun 13, 1989·12 cites·1 claims
- 2838US4408388AMethod for manufacturing a bipolar integrated circuit device with a self-alignment base contactTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Oct 11, 1983·8 cites·4 claims
- 2935US4615103AMethod of forming isolation regions containing conductive patterns thereinTOKYO SHIBAURA ELECTRIC CO·Filed 1985·Granted Oct 7, 1986·4 cites·5 claims
- 3032US4954454AMethod for fabricating a polycrystalline silicon resistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Sep 4, 1990·5 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →