Inventor · disambiguated record
Shinichiro Kawabata
Also filed as: KAWABATA SHINICHIRO
12 granted patents·4 pending applications·16 citations·filing 2006–2023
87Inventor score
Top patents by PatentIndex Score
16 records- 0190US10301743B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2017·Granted May 28, 2019·5 cites·15 claims
- 0288US9518337B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2015·Granted Dec 13, 2016·4 cites·20 claims
- 0384US10903072B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Jan 26, 2021·1 cites·18 claims
- 0483US9096945B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2012·Granted Aug 4, 2015·4 cites·10 claims
- 0580US2024105449A1CONDUCTIVE C-PLANE GaN SUBSTRATEMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 0678US10796904B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Oct 6, 2020·1 cites·18 claims
- 0774US10720326B2Method for growing GaN crystal and C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Jul 21, 2020·1 cites·21 claims
- 0874US2022033992A1Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2021·Application pending·0 cites
- 0973US11810782B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Nov 7, 2023·0 cites·25 claims
- 1071US11591715B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2021·Granted Feb 28, 2023·0 cites·13 claims
- 1166US11404268B2Method for growing GaN crystal and c-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 1266US11162190B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2019·Granted Nov 2, 2021·0 cites·19 claims
- 1361US11001940B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2018·Granted May 11, 2021·0 cites·22 claims
- 1458US10526726B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2016·Granted Jan 7, 2020·0 cites·22 claims
- 1545US2010104495A1Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and deviceMITSUBISHI CHEM CORP·Filed 2007·Application pending·0 cites
- 1645US2009092536A1Crystal production process using supercritical solvent, crystal growth apparatus, crystal and deviceUNIV TOHOKU·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →