Inventor · disambiguated record
Shoichi Kawamura
Also filed as: KAWAMURA SHOICHI
26 granted patents·3 pending applications·934 citations·filing 1997–2019
97Inventor score
Files withFUJITSU LTD13ADVANCED MICRO DEVICES INC7SAMSUNG ELECTRONICS CO LTD5KAWAMURA SHOICHI3NEUROCEUTICALS INC1
Top patents by PatentIndex Score
29 records- 0197US6288944B1NAND type nonvolatile memory with improved erase-verify operationsFUJITSU LTD·Filed 2000·Granted Sep 11, 2001·144 cites·8 claims
- 0296US5821800AHigh-voltage CMOS level shifterADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 13, 1998·144 cites·17 claims
- 0393US6707714B2Read disturb alleviated flash memoryFUJITSU LTD·Filed 2002·Granted Mar 16, 2004·76 cites·13 claims
- 0491US6670669B1Multiple-bit non-volatile memory utilizing non-conductive charge trapping gateFUJITSU LTD·Filed 2000·Granted Dec 30, 2003·60 cites·10 claims
- 0591US6288940B1Non-volatile semiconductor memory deviceFUJITSU LTD·Filed 2000·Granted Sep 11, 2001·62 cites·10 claims
- 0690US6614686B1Nonvolatile memory circuit for recording multiple bit informationFUJITSU LTD·Filed 2000·Granted Sep 2, 2003·58 cites·7 claims
- 0788US6288936B1Nonvolatile memory for storing multivalue dataFUJITSU LTD·Filed 2000·Granted Sep 11, 2001·49 cites·11 claims
- 0882US6925005B2AC sensing method memory circuitFUJITSU LTD·Filed 2003·Granted Aug 2, 2005·31 cites·13 claims
- 0982US6747894B2Nonvolatile multilevel cell memoryFUJITSU LTD·Filed 2002·Granted Jun 8, 2004·31 cites·19 claims
- 1082US6266275B1Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memoryADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·41 cites·8 claims
- 1181US6266271B1Nonvolatile semiconductor memory for preventing unauthorized copyingFUJITSU LTD·Filed 2000·Granted Jul 24, 2001·30 cites·7 claims
- 1281US5978267ABit line biasing method to eliminate program disturbance in a non-volatile memory device and memory device employing the sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 2, 1999·48 cites·10 claims
- 1380US5912489ADual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memoryADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 15, 1999·38 cites·4 claims
- 1479US6826081B2Nonvolatile semiconductor memory device, nonvolatile semiconductor memory device-integrated system, and defective block detecting methodFUJITSU LTD·Filed 2003·Granted Nov 30, 2004·27 cites·23 claims
- 1572US8477524B2Nonvolatile memory devices and related methods and systemsKAWAMURA SHOICHI·Filed 2010·Granted Jul 2, 2013·5 cites·16 claims
- 1670US6259630B1Nonvolatile semiconductor memory device equipped with verification circuit for identifying the address of a defective cellFUJITSU LTD·Filed 2000·Granted Jul 10, 2001·18 cites·10 claims
- 1762US5801579AHigh voltage NMOS pass gate for integrated circuit with high voltage generatorADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 1, 1998·22 cites·25 claims
- 1861US8605512B2Nonvolatile semiconductor memory device and method of operating a nonvolatile memory deviceKAWAMURA SHOICHI·Filed 2011·Granted Dec 10, 2013·3 cites·14 claims
- 1961US6738288B2Semiconductor memoryFUJITSU LTD·Filed 2003·Granted May 18, 2004·11 cites·11 claims
- 2061US5852576AHigh voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·21 cites·25 claims
- 2158US7872917B2Non-volatile semiconductor memory device and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·3 cites·9 claims
- 2250US5999452ADual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for NAND array flash memoryADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 7, 1999·10 cites·12 claims
- 2348US8040730B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·2 cites·11 claims
- 2442US12402944B2Light radiating deviceNEUROCEUTICALS INC·Filed 2019·Granted Sep 2, 2025·0 cites·13 claims
- 2537US8264891B2Erase method and non-volatile semiconductor memoryKAWAMURA SHOICHI·Filed 2009·Granted Sep 11, 2012·0 cites·9 claims
- 2636US7499318B2Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 3, 2009·0 cites·12 claims
- 2736US2013159610A1Non-volatile semiconductor memory device related method of operationSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 2836US2007140015A1Nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2932US2003016560A1Semiconductor memory and method of driving semiconductor memoryFUJITSU LTD·Filed 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Shoichi Kawamura files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →