Inventor · disambiguated record
Shinichiro Kimura
Also filed as: KIMURA SHIN-ICHIRO · KIMURA SHINICHIRO
78 granted patents·19 pending applications·2,322 citations·filing 1983–2016
99Inventor score
Top patents by PatentIndex Score
97 records- 0197US7504689B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Mar 17, 2009·60 cites·9 claims
- 0296US4742018AProcess for producing memory cell having stacked capacitorHITACHI LTD·Filed 1986·Granted May 3, 1988·133 cites·10 claims
- 0396US4670768AComplementary MOS integrated circuits having vertical channel FETsHITACHI LTD·Filed 1984·Granted Jun 2, 1987·107 cites·5 claims
- 0494US6770535B2Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 2001·Granted Aug 3, 2004·88 cites·40 claims
- 0594US6535435B2Reference voltage generator permitting stable operationHITACHI LTD·Filed 2001·Granted Mar 18, 2003·82 cites·3 claims
- 0694US6130449ASemiconductor memory device and a method for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 10, 2000·114 cites·3 claims
- 0794US4970564ASemiconductor memory device having stacked capacitor cellsHITACHI LTD·Filed 1988·Granted Nov 13, 1990·99 cites·26 claims
- 0893US7872298B2Split-gate type memory deviceRENESAS ELECTRONICS CORP·Filed 2007·Granted Jan 18, 2011·20 cites·15 claims
- 0993US7259422B1Nonvolatile semiconductor memory device and its fabrication methodRENESAS TECH CORP·Filed 2007·Granted Aug 21, 2007·25 cites·3 claims
- 1093US7235441B2Nonvolatile semiconductor memory device with tapered sidewall gate and method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Granted Jun 26, 2007·72 cites·14 claims
- 1193US5355330ACapacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrodeHITACHI LTD·Filed 1992·Granted Oct 11, 1994·115 cites·14 claims
- 1292US6335893B1Semiconductor integrated circuit deviceHITACHI LTD·Filed 1998·Granted Jan 1, 2002·91 cites·23 claims
- 1392US5466621AMethod of manufacturing a semiconductor device having silicon islandsHITACHI LTD·Filed 1993·Granted Nov 14, 1995·137 cites·20 claims
- 1491US8030668B2Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEICHITACHI LTD·Filed 2007·Granted Oct 4, 2011·20 cites·13 claims
- 1591US7671404B2Fabrication method and structure of semiconductor non-volatile memory deviceRENESAS TECH CORP·Filed 2006·Granted Mar 2, 2010·13 cites·10 claims
- 1691US5140389ASemiconductor memory device having stacked capacitor cellsHITACHI LTD·Filed 1990·Granted Aug 18, 1992·74 cites·23 claims
- 1790US4918502ASemiconductor memory having trench capacitor formed with sheath electrodeHITACHI LTD·Filed 1987·Granted Apr 17, 1990·70 cites·25 claims
- 1889US8143668B2SiGe MOSFET semiconductor device with sloped source/drain regionsMORITA YUSUKE·Filed 2009·Granted Mar 27, 2012·16 cites·5 claims
- 1989US5091761ASemiconductor device having an arrangement of IGFETs and capacitors stacked thereoverHITACHI LTD·Filed 1989·Granted Feb 25, 1992·70 cites·42 claims
- 2087US8409936B2Method for manufacturing a semiconductor device by forming portions thereof at the same timeTSUCHIYA RYUTA·Filed 2012·Granted Apr 2, 2013·8 cites·8 claims
- 2187US8076709B2Nonvolatile semiconductor memory deviceISHIMARU TETSUYA·Filed 2010·Granted Dec 13, 2011·10 cites·20 claims
- 2287US7935597B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted May 3, 2011·7 cites·5 claims
- 2387US6376304B1Semiconductor memory device and a method for fabricating the sameHITACHI LTD·Filed 2000·Granted Apr 23, 2002·39 cites·3 claims
- 2487US4937641ASemiconductor memory and method of producing the sameHITACHI LTD·Filed 1987·Granted Jun 26, 1990·67 cites·11 claims
- 2586US7132718B2Fabrication method and structure of semiconductor non-volatile memory deviceRENESAS TECH CORP·Filed 2003·Granted Nov 7, 2006·23 cites·16 claims
- 2686US5357464ASemiconductor memory having writing and reading transistors, method of fabrication thereof, and method of use thereofHITACHI LTD·Filed 1993·Granted Oct 18, 1994·63 cites·8 claims
- 2786US5346834AMethod for manufacturing a semiconductor device and a semiconductor memory deviceHITACHI LTD·Filed 1992·Granted Sep 13, 1994·89 cites·1 claims
- 2885US5115289ASemiconductor device and semiconductor memory deviceHITACHI LTD·Filed 1991·Granted May 19, 1992·93 cites·25 claims
- 2984US7442986B2Nonvolatile semiconductor memory device with tapered sidewall gate and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Oct 28, 2008·9 cites·6 claims
- 3083US8084810B2Fabrication method and structure of semiconductor non-volatile memory deviceHISAMOTO DIGH·Filed 2009·Granted Dec 27, 2011·6 cites·16 claims
- 3183US4873560ADynamic random access memory having buried word linesHITACHI LTD·Filed 1988·Granted Oct 10, 1989·50 cites·42 claims
- 3282US8334794B2Input device and keyboard device having illumination functionWATANABE KAZUTOSHI·Filed 2009·Granted Dec 18, 2012·13 cites·24 claims
- 3382US7847343B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Dec 7, 2010·8 cites·3 claims
- 3481US8183115B2Method of manufacturing a semiconductor device having elevated layers of differing thicknessISHIGAKI TAKASHI·Filed 2011·Granted May 22, 2012·5 cites·8 claims
- 3581US6576928B2Semiconductor device capacitor with high permittivity tantalum pentoxide/niobium pentoxide dielectricHITACHI LTD·Filed 2001·Granted Jun 10, 2003·20 cites·24 claims
- 3679US7212444B2Semiconductor nonvolatile memory deviceRENESAS TECH CORP·Filed 2005·Granted May 1, 2007·8 cites·5 claims
- 3779US5658811AMethod of manufacturing a semiconductor deviceHITACHI LTD·Filed 1995·Granted Aug 19, 1997·45 cites·31 claims
- 3877US6661048B2Semiconductor memory device having self-aligned wiring conductorHITACHI LTD·Filed 2001·Granted Dec 9, 2003·15 cites·7 claims
- 3976US6953728B2Semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 2004·Granted Oct 11, 2005·17 cites·5 claims
- 4076US6727146B2Semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 2002·Granted Apr 27, 2004·17 cites·2 claims
- 4173US6867090B2Semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 2003·Granted Mar 15, 2005·13 cites·10 claims
- 4272US6538945B2Sense amplifiers having reduced Vth deviationHITACHI LTD·Filed 2002·Granted Mar 25, 2003·17 cites·20 claims
- 4369US7847331B2Nonvolatile semiconductor memory deviceRenesas Electronics Corportion·Filed 2005·Granted Dec 7, 2010·4 cites·22 claims
- 4469US6900492B2Integrated circuit device with P-type gate memory cell having pedestal contact plug and peripheral circuitNEC ELECTRONICS CORP·Filed 2002·Granted May 31, 2005·12 cites·9 claims
- 4568US6831316B1Semiconductor memory device and method of manufacturing the sameHITACHI LTD·Filed 2000·Granted Dec 14, 2004·11 cites·33 claims
- 4667US6677194B2Method of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 2002·Granted Jan 13, 2004·11 cites·22 claims
- 4767US5270232AProcess for fabricating field effect transistorHITACHI LTD·Filed 1992·Granted Dec 14, 1993·27 cites·6 claims
- 4866US8064261B2Semiconductor nonvolatile memory deviceHISAMOTO DIGH·Filed 2010·Granted Nov 22, 2011·2 cites·14 claims
- 4965US6798005B2Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuitsHITACHI LTD·Filed 2002·Granted Sep 28, 2004·8 cites·12 claims
- 5062US7619911B2Semiconductor integrated circuit deviceELPIDA MEMORY INC·Filed 2003·Granted Nov 17, 2009·12 cites·3 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →