Inventor · disambiguated record
Sheng-Chih Lai
Also filed as: LAI SHENG C · LAI SHENG-CHIH
104 granted patents·42 pending applications·263 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD127MACRONIX INT CO LTD12LAI SHENG-CHIH5LUE HANG-TING1MACRON IX INT CO LTD1
Top patents by PatentIndex Score
146 records- 0199US11411025B23D ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·9 cites·20 claims
- 0299US11171157B1Method for forming a MFMIS memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·26 cites·20 claims
- 0398US11424406B2Generating self-aligned heater for PCRAM using filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·8 cites·20 claims
- 0497US11990169B2Transistorless memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·2 cites·20 claims
- 0597US11800718B2Semiconductor memory device with gate line passing through source/drain, channel and dielectric layers over viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·2 cites·20 claims
- 0697US11404476B2Bipolar selector with independently tunable threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0797US10644231B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 5, 2020·22 cites·20 claims
- 0897US7816727B2High-κ capped blocking dielectric bandgap engineered SONOS and MONOSMACRONIX INT CO LTD·Filed 2008·Granted Oct 19, 2010·56 cites·19 claims
- 0996US11729983B2Peripheral circuitry under array memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 1096US11710790B2Memory array channel regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·4 cites·20 claims
- 1195US11903214B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 1295US11792999B2Bipolar selector with independently tunable threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·2 cites·20 claims
- 1395US11037952B2Peripheral circuitry under array memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·7 cites·20 claims
- 1495US10991756B2Bipolar selector with independently tunable threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·11 cites·20 claims
- 1595US7737488B2Blocking dielectric engineered charge trapping memory cell with high speed eraseMACRONIX INT CO LTD·Filed 2007·Granted Jun 15, 2010·44 cites·24 claims
- 1694US11683988B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
- 1792US11723199B2Protective liner layers in 3D memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·2 cites·20 claims
- 1892US11640974B2Memory array isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·2 cites·20 claims
- 1991US12376310B2Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·1 cites·20 claims
- 2091US2025344402A1Bipolar selector with independently tunable threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2190US12219880B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·0 cites·20 claims
- 2290US8987700B2Thermally confined electrode for programmable resistance memoryLAI SHENG-CHIH·Filed 2011·Granted Mar 24, 2015·8 cites·21 claims
- 2389US12354634B2Transistorless memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2489US11805658B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 2589US2024381649A1Method for forming semiconductor memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2688US11189658B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 30, 2021·4 cites·20 claims
- 2788US2025366006A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2888US2025318140A1Semiconductor structure and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2987US12389607B2Bipolar selector with independently tunable threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 3087US12069958B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 3187US11508753B2Embedded ferroelectric FinFET memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
- 3287US2025311225A1Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3386US2025287603A1Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3486US2025329364A1Memory device with unipolar selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3585US12464723B2Semiconductor memory device with vertical gate lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3685US12336183B2Three-dimensional ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 3785US12137566B2Peripheral circuitry under array memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 3885US10978473B2Flash memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·3 cites·20 claims
- 3985US2025292816A1Transistorless memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4085US2025294771A1High selectivity isolation structure for improving effectiveness of 3d memory fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4185US2024397724A1Peripheral circuitry under array memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4285US2025081470A1Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4384US12419054B2Three-dimensional memory array with local line selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 4484US12356628B2Memory device and method for making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 4584US12058860B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
- 4684US8330210B2High-κ capped blocking dielectric bandgap engineered SONOS and MONOSLAI SHENG-CHIH·Filed 2012·Granted Dec 11, 2012·6 cites·19 claims
- 4783US12363911B2Semiconductor structure and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 4883US12266408B2Vertical fuse memory in one-time program memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 4983US12150311B2Embedded ferroelectric FinFET memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 5083US2025318137A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 146 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →