Inventor · disambiguated record
Shao-Kuan Lee
Also filed as: LEE SHAO-KUAN
64 granted patents·45 pending applications·83 citations·filing 2010–2025
98Inventor score
Top patents by PatentIndex Score
109 records- 0198US11538749B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·7 cites·20 claims
- 0297US11908792B2Semiconductor device comprising cap layer over dielectric layer and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·3 cites·20 claims
- 0397US11810815B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·3 cites·20 claims
- 0497US11322395B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·4 cites·20 claims
- 0596US11854963B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0696US11355430B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
- 0794US12512403B2Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·1 cites·20 claims
- 0894US12176246B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·1 cites·20 claims
- 0993US12132000B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·2 cites·20 claims
- 1093US12068193B2Semiconductor device structure with interconnect structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·2 cites·20 claims
- 1192US12230537B2Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·1 cites·20 claims
- 1292US11189560B2Semiconductor device comprising etch stop layer over dielectric layer and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·6 cites·20 claims
- 1392US10211097B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 19, 2019·7 cites·7 claims
- 1491US11222843B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·5 cites·20 claims
- 1590US11990400B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 1689US12009301B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·1 cites·20 claims
- 1788US8304660B2Fully reflective and highly thermoconductive electronic module and method of manufacturing the sameTUAN WEI-HSING·Filed 2010·Granted Nov 6, 2012·13 cites·16 claims
- 1887US10930551B2Methods for fabricating a low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
- 1987US10867850B2Selective deposition method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
- 2087US2025336716A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2187US2025364400A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2286US12412780B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2386US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2484US12482743B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 2584US2025323146A1Novel self-aligned via structure by selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2683US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 2783US11658092B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·1 cites·20 claims
- 2883US2025323095A1Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2982US12463134B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3082US11355390B2Interconnect strucutre with protective etch-stopTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
- 3181US12278143B2Method of providing a workpiece including low resistance interconnect low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 3280US11894266B2Metal capping layer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 3380US2025279316A1Interconnect structures including air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US12381143B2Self-align via structure by selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 3579US12074084B2Heat dispersion layers for double sided interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3679US12033889B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 3779US2025357194A1Interconnect structure with high thermal conductivity and low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3879US2025046673A1Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3978US12165945B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 4078US9586382B2Ceramic/metal composite structureTUAN WEI-HSING·Filed 2012·Granted Mar 7, 2017·5 cites·14 claims
- 4178US2025357192A1Interconnect structure with low capacitance and high thermal conductivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4278US2024321573A1Using A Self-Assembly Layer To Facilitate Selective Formation of An Etching Stop LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4378US2024347412A1Heat dispersion layers for double sided interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4478US2024290718A1Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4577US11075113B2Metal capping layer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·1 cites·20 claims
- 4677US9892946B1Processing apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·2 cites·20 claims
- 4776US12308286B2Interconnect structures including air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 4876US2025329606A1Integrated circuit device including a high thermal conductivity electrically insulating structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4975US11935783B2Selective deposition for integrated circuit interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 5075US11527435B2Metal capping layer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →