Inventor · disambiguated record
Shen-Yang Lee
Also filed as: LEE SHEN-YANG
3 granted patents·12 pending applications·0 citations·filing 2022–2025
44Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15
Top patents by PatentIndex Score
15 records- 0180US2025366002A1Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0278US2025359175A1Gate Dielectric for Gate Leakage ReductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0369US12490467B2Transistor and semiconductor device with multiple threshold voltages and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 0469US2025359281A1Gate structure with oxygen barrier and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0568US12426292B2Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 0665US2024266415A1Gate Dielectric for Gate Leakage ReductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0757US2024355899A1Gate structure with oxygen barrier and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0855US12495566B2Semiconductor device having strained channel and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 0954US2024405093A1Crystallization temperature reduction of high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1053US2024339329A1Gas phase treatment for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1151US2023411520A1Semiconductor structure including semiconductor devices with different threshold voltages and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1251US2025176213A1Semiconductor device including interfacial layer with cet scaling and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1350US2024313064A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1450US2024304667A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1547US2024332091A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →