Inventor · disambiguated record

Shuen-Shin Liang

Also filed as: LIANG SHUEN-SHIN

55 granted patents·40 pending applications·46 citations·filing 2019–2025

97Inventor score

Technology areasH10W H10D H10P G02F H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD93 TAIWAN SEMICONDUCTOR MANFACTURING CO LTD1 TAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD1

Top patents by PatentIndex Score

95 records

0198US11626494B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
0298US11393924B2Structure and formation method of semiconductor device with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·6 cites·20 claims
0397US11855215B2Semiconductor device structure with high contact areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·3 cites·20 claims
0495US11563083B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
0595US11296187B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
0693US11158539B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·6 cites·19 claims
0791US12040372B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
0891US11837544B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
0991US11688766B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·1 cites·20 claims
1091US2025366038A1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1189US11227794B2Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
1289US11011413B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·6 cites·20 claims
1387US12341013B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
1486US12148807B2Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·1 cites·20 claims
1586US2025349614A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1686US2025308901A1Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1784US2025351457A1Transistor insulating finsTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2025·Application pending·0 cites
1883US11894437B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·1 cites·20 claims
1983US11489057B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 1, 2022·1 cites·20 claims
2083US2025324732A1Methods for manufacturing semiconductor devices with tunable low-k inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2182US11929327B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 12, 2024·1 cites·20 claims
2282US11521929B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·1 cites·20 claims
2381US12324200B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
2481US12272752B2Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
2581US12080766B2Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
2681US11594609B2Liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
2780US12046634B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
2879US11217524B1Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
2979US2024379425A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3079US2024363704A1Epitaxial backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3179US2024379797A1Transistor insulating finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3279US2025338561A1Isolation for Multigate DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3378US2024243009A1Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3478US2025344487A1Multi-gate device fabrication methods and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3578US2025351424A1Void-free conductive contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3677US2024332393A1Contact Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3777US2025359278A1Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3877US2024363722A1Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3977US2025331212A1Semiconductor device with silicide structures surrounding epitaxial structures and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4077US2024355742A1Hybrid Conductive StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4176US12400962B2Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
4276US12094952B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
4376US12057397B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
4476US12051592B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
4576US2025359183A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4676US2025323163A1Liner-free conductive structures with anchor pointsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4775US12369388B2Semiconductor devices with tunable low-K inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
4875US12349408B2Transistor gate contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
4975US11972974B2Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
5075US2024355741A1Capping Layer For Liner-Free Conductive StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites

Showing the top 50 of 95 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Shuen-Shin Liang files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →