Inventor · disambiguated record
Shan-Mei Liao
Also filed as: Liao shan-mei
15 granted patents·11 pending applications·0 citations·filing 2020–2025
85Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26
Top patents by PatentIndex Score
26 records- 0185US2025351539A1Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0284US12302627B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0383US12317574B2Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 0482US2025267920A1Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0580US2025287677A1Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0679US12171091B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 0779US11908745B2Semiconductor device with non-conformal gate dieletric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 20, 2024·0 cites·20 claims
- 0878US12433011B2Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 0978US2024381608A1Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1077US2025351546A1P-Type Semiconductor Devices With Different Threshold Voltages And Methods Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1177US2025344423A1Treatment for tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1274US12041760B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1373US2024387277A1Multiple threshold voltage implementation through lanthanum incorporationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1473US2024413221A1Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1572US11605563B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 1672US2024387639A1Semiconductor structures with multiple threshold voltage offerings and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1771US12009400B2Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1871US2024387682A1Metal gates and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1971US2025133759A1Treatment for tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2069US11735484B2Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 22, 2023·0 cites·20 claims
- 2168US12074206B2Integrated circuit device with improved reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 2265US12453165B2P-type semiconductor devices with different threshold voltages and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2365US12154964B2Metal gates with layers for transistor threshold voltage tuning and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 2462US12142640B2Semiconductor structures with multiple threshold voltage offerings and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·20 claims
- 2548US12022643B2Multi-layer high-k gate dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 25, 2024·0 cites·19 claims
- 2648US11664279B2Multiple threshold voltage implementation through lanthanum incorporationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →