Inventor · disambiguated record
Shih-Hao Lin
Also filed as: LIN SHIH-HAO
128 granted patents·69 pending applications·230 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD158ACER INC32UNIV NAT TSING HUA3CHEN CHUN-CHI1ELAN MICROELECTRONICS CORP1
Top patents by PatentIndex Score
197 records- 0198US11495682B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·5 cites·20 claims
- 0297US12040405B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·4 cites·20 claims
- 0397US11996484B2Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·4 cites·20 claims
- 0497US11462282B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·7 cites·20 claims
- 0597US11367479B2SRAM structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
- 0697US11342338B2Memory device with improved margin and performance and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·4 cites·20 claims
- 0796US11916105B2Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·3 cites·20 claims
- 0894US11996468B2Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·3 cites·20 claims
- 0994US6184580B1Ball grid array package with conductive leadsSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 1999·Granted Feb 6, 2001·165 cites·11 claims
- 1093US12294030B2Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 6, 2025·1 cites·20 claims
- 1193US11581226B2Semiconductor device with tunable epitaxy structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·20 claims
- 1291US2025358996A1Macro and sram bit cell cooptimizatoin for performance (long/shortwordline combo sram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1390US11539933B23D display system and 3D display methodACER INC·Filed 2021·Granted Dec 27, 2022·2 cites·11 claims
- 1489US12380958B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1589US12234569B2Non-enzyme sensor, non-enzyme sensor element and fabricating method thereofUNIV NAT TSING HUA·Filed 2022·Granted Feb 25, 2025·1 cites·10 claims
- 1689US11404426B2Controlling trap formation to improve memory window in one-time program devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 1789US11217679B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·20 claims
- 1889US2025316320A1Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1989US2025324582A1Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2088US11430788B2Integrated circuit with latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 2188US11257817B2Integrated chip with improved latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·2 cites·20 claims
- 2288US10684842B2Portable electronic device and data updating methodACER INC·Filed 2017·Granted Jun 16, 2020·9 cites·16 claims
- 2387US12315738B2Method of forming a gate structure including semiconductor material implantation into dummy gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 2486US12159924B2Structure and method for multigate devices with suppressed diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·1 cites·20 claims
- 2586US2025359159A1Semiconductor Device Structure And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2685US12302609B2Semiconductor device including alternating semiconductor layers with different widths and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2785US11949016B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·1 cites·20 claims
- 2885US11605638B2Transistors with multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 2985US11393831B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 3085US2025351539A1Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3185US2025301618A1Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3284US12426226B2Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 3384US12363893B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 3484US12302604B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 3584US12142684B2Cut metal gate in memory macro edge and middle strapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 3684US2025366094A1Semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3784US2024379851A1Cut metal gate in memory macro edge and middle strapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3884US2025301783A1Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3983US12336281B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 4083US2025301715A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4183US2025366049A1Method and structure for gate-all-around devices with deep s/d contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4282US2025365912A1Epitaxial features in semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4381US12501626B2Magnetic device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 4481US2025311293A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4581US2025359194A1Source/drain structure for semiconductor devices and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4681US2025287655A1Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4780US12349329B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 4880US12317550B2Methods of forming a semiconductor device with corner isolation protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4980US12080604B2Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 5080US11942169B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
Showing the top 50 of 197 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →