Inventor · disambiguated record
Shao-Yu Lin
Also filed as: LIN SHAO-YU
10 granted patents·5 pending applications·51 citations·filing 2013–2025
85Inventor score
Top patents by PatentIndex Score
15 records- 0196US11749328B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·3 cites·20 claims
- 0288US12451175B2Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·1 cites·20 claims
- 0388US11410714B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·6 cites·20 claims
- 0484USD715784SScreen film kit for a tablet or a phoneLIN SHAO YU·Filed 2013·Granted Oct 21, 2014·41 cites·1 claims
- 0583US12315541B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 0683US2025366080A1Memory device with magnetic tunnel junctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0782US12069965B2Method for manufacturing memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 0881US2025259662A1Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US11778923B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1075US2025364025A1Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1175US2024355912A1Memory device with magnetic tunnel junctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1274US2024341200A1Memory structure with ferromagnetic electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1371US12062713B2Memory device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1470US12052934B2Memory structure and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1552US11177430B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →