Inventor · disambiguated record
Shin-Cheng Lin
Also filed as: LIN SHIN-CHENG
69 granted patents·5 pending applications·243 citations·filing 2001–2024
98Inventor score
Files withVANGUARD INT SEMICONDUCT CORP68CHIN YU-LUNG1EPISIL TECHNOLOGIES INC1KINIK CO1LIN SHIN-CHENG1
Top patents by PatentIndex Score
74 records- 0199US11152364B1Semiconductor structure and methods for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Oct 19, 2021·10 cites·28 claims
- 0297US11049799B1Semiconductor structure and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Jun 29, 2021·7 cites·20 claims
- 0396US10002956B1High electron mobility transistorVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Jun 19, 2018·16 cites·13 claims
- 0495US10930745B1Semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Feb 23, 2021·11 cites·20 claims
- 0595US9054129B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Jun 9, 2015·18 cites·13 claims
- 0694US10692786B1Semiconductor structuresVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Jun 23, 2020·16 cites·23 claims
- 0794US8704300B1Semiconductor device and fabricating method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2012·Granted Apr 22, 2014·22 cites·18 claims
- 0893US9129989B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Sep 8, 2015·8 cites·11 claims
- 0991US10256332B1High hole mobility transistorVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Apr 9, 2019·8 cites·13 claims
- 1091US9306034B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Apr 5, 2016·8 cites·9 claims
- 1190US9941356B1JFET and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Apr 10, 2018·5 cites·6 claims
- 1289US10014408B1Semiconductor devices and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Jul 3, 2018·6 cites·12 claims
- 1389US9799512B1Semiconductor substrate structures and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Oct 24, 2017·6 cites·15 claims
- 1488US7411271B1Complementary metal-oxide-semiconductor field effect transistorEPISIL TECHNOLOGIES INC·Filed 2007·Granted Aug 12, 2008·20 cites·8 claims
- 1587US9577506B1High-side circuits with modified diode and layout placement thereofVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Feb 21, 2017·6 cites·10 claims
- 1687US8723256B1Semiconductor device and fabricating method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2012·Granted May 13, 2014·9 cites·12 claims
- 1784US10217854B1Semiconductor device and method of manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Feb 26, 2019·4 cites·20 claims
- 1884US10128331B1High-voltage semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Nov 13, 2018·4 cites·18 claims
- 1982US9768283B1High-voltage semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Sep 19, 2017·4 cites·14 claims
- 2082US9559200B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Jan 31, 2017·2 cites·27 claims
- 2181US10262997B2High-voltage LDMOSFET devices having polysilicon trench-type guard ringsVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Apr 16, 2019·4 cites·16 claims
- 2280US10707322B2Semiconductor devices and methods for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Jul 7, 2020·2 cites·20 claims
- 2380US9929283B1Junction field effect transistor (JFET) with first and second top layer of opposite conductivity type for high driving current and low pinch-off voltageVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Mar 27, 2018·3 cites·20 claims
- 2479US11955522B2Semiconductor structure and method of forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Apr 9, 2024·1 cites·12 claims
- 2579US9269808B2Method and apparatus for power device with depletion structureVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Feb 23, 2016·3 cites·42 claims
- 2678US10256340B2High-voltage semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Apr 9, 2019·3 cites·26 claims
- 2776US9666711B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted May 30, 2017·2 cites·18 claims
- 2875US6715214B1Retractable tape measureFiled 2003·Granted Apr 6, 2004·20 cites·3 claims
- 2973US10217831B1High electron mobility transistor devicesVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Feb 26, 2019·1 cites·10 claims
- 3071US10032938B1Semiconductor devices and methods for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 3170US10714410B1Semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Jul 14, 2020·1 cites·19 claims
- 3270US10692857B2Semiconductor device combining passive components with HEMTVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Jun 23, 2020·1 cites·11 claims
- 3370US10229907B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Mar 12, 2019·1 cites·30 claims
- 3469US7795083B2Semiconductor structure and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Sep 14, 2010·4 cites·16 claims
- 3568US10388649B2Semiconductor devices and methods for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Aug 20, 2019·1 cites·19 claims
- 3667US10262938B2Semiconductor structure having conductive layer overlapping field oxideVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Apr 16, 2019·1 cites·17 claims
- 3766US10886394B1Semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Jan 5, 2021·1 cites·20 claims
- 3864US10573738B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Feb 25, 2020·0 cites·20 claims
- 3963US12336276B2Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 4063US11955542B2Semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Apr 9, 2024·0 cites·11 claims
- 4161US8501565B2Method for fabricating deep trench isolationCHIN YU-LUNG·Filed 2011·Granted Aug 6, 2013·2 cites·16 claims
- 4260US10033260B2Boost devices with active diodes and switch-mode converters thereofVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Jul 24, 2018·1 cites·14 claims
- 4359US10867993B2Touch sensing circuits and methods for detecting touch eventsVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Dec 15, 2020·0 cites·4 claims
- 4459US10205014B2Method and apparatus for power device with multiple doped regionsVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Feb 12, 2019·0 cites·10 claims
- 4558US10483362B2High electron mobility transistor devices and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Nov 19, 2019·0 cites·10 claims
- 4658US2010170431A1Air-floating device for rescueLIN SHIN-CHENG·Filed 2009·Application pending·0 cites
- 4757US10355096B2High electron mobility transistor devices and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Jul 16, 2019·0 cites·12 claims
- 4856US10181512B2JFET and method for fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Jan 15, 2019·0 cites·4 claims
- 4956US9608107B2Method and apparatus for MOS device with doped regionVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Mar 28, 2017·0 cites·20 claims
- 5056US2025338535A1Semiconductor device and method of forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →