Inventor · disambiguated record

Sheng-Hsuan Lin

Also filed as: LIN SHENG-HSUAN

44 granted patents·9 pending applications·574 citations·filing 2013–2025

97Inventor score

Technology areasH10P H10D H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD49 TAIWAN SEMICONDUCTOR MFG4

Top patents by PatentIndex Score

53 records

0198US9831183B2Contact structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 28, 2017·493 cites·20 claims
0295US9230795B1Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 5, 2016·24 cites·20 claims
0394US9735050B2Composite contact plug structure and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·8 cites·20 claims
0493US11348839B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·5 cites·20 claims
0592US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
0692US9905670B2Bi-layer metal deposition in silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·6 cites·20 claims
0789US10756017B2Contact structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·4 cites·20 claims
0887US9984924B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·3 cites·20 claims
0986US9368357B2Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·4 cites·20 claims
1085US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1184US12218012B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
1284US11854874B2Metal contact structure and method of forming the same in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·19 claims
1384US9076823B2Bi-layer metal deposition in silicide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·4 cites·20 claims
1483US10276432B2Composite contact plug structure and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·2 cites·19 claims
1582US11342225B2Barrier-free approach for forming contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
1680US2025063783A1Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1779US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
1879US11810826B2Semiconductor devices with stacked silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
1977US10504834B2Contact structure and the method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
2077US2024395611A1Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2177US2025357348A1Barrier free tungsten liner in contact plugs and the method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2276US12166078B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
2376US11901229B2Barrier-free approach for forming contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
2476US9966339B2Barrier structure for copper interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 8, 2018·4 cites·20 claims
2576US2024087953A1Metal Contact Structure and Method of Forming the Same in a Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2676US2025159965A1Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2775US9530736B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 27, 2016·2 cites·28 claims
2874US10079174B2Composite contact plug structure and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 18, 2018·2 cites·20 claims
2970US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
3070US10964590B2Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·1 cites·20 claims
3169US12191199B2Contact metallization processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
3267US2024355740A1Barrier Free Tungsten Liner in Contact Plugs and The Method Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3366US9818834B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·1 cites·20 claims
3465US11335774B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·0 cites·19 claims
3565US10985058B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
3662US10504778B2Composite contact plug structure and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
3762US10269630B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·0 cites·20 claims
3861US10263088B2Method for silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 16, 2019·0 cites·20 claims
3961US10043885B2Bi-layer metal deposition in silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 7, 2018·0 cites·20 claims
4060US11195791B2Method for forming semiconductor contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·0 cites·20 claims
4159US9620601B2Contact structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·0 cites·20 claims
4258US9859390B2Method for silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·0 cites·20 claims
4357US10269713B2Contact structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
4457US9397040B2Semiconductor device comprising metal plug having substantially convex bottom surfaceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·0 cites·20 claims
4556US10825724B2Metal contact structure and method of forming the same in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2020·0 cites·20 claims
4655US9466488B2Metal-semiconductor contact structure with doped interlayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·0 cites·20 claims
4754US9666438B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·0 cites·20 claims
4854US2025066899A1Method of physical vapor deposition with intermixing reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4953US10049925B2Metal-semiconductor contact structure with doped interlayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·0 cites·20 claims
5053US10050116B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims

Showing the top 50 of 53 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →