Inventor · disambiguated record
Shiuan-Jeng Lin
Also filed as: LIN SHIUAN-JENG
24 granted patents·6 pending applications·29 citations·filing 2013–2024
93Inventor score
Top patents by PatentIndex Score
30 records- 0191US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 0290US10155656B2Inter-poly connection for parasitic capacitor and die size improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 18, 2018·5 cites·20 claims
- 0389US11407636B2Inter-poly connection for parasitic capacitor and die size improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 9, 2022·4 cites·20 claims
- 0488US11031320B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·3 cites·20 claims
- 0587US11688666B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 0687US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 0782US12068227B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 0882US2024363495A1Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0980US2025120158A1Bipolar junction transistor (bjt) and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1078US2024387650A1Bipolar junction transistor (bjt) and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1175US11942543B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 1271US12074162B2Structure and formation method of semiconductor device with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 1371US10879236B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 1470US9966427B2Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 8, 2018·2 cites·20 claims
- 1570US2024321767A1Alignment mark structure and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1669US12211910B2Bipolar junction transistor (BJT) and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 1768US11424359B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 1867US12062686B2Structure and formation method of semiconductor device with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 13, 2024·0 cites·20 claims
- 1963US12033951B2Alignment mark structure and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims
- 2062US2025393318A1Methods for improving image lag in image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2161US9209298B2Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·1 cites·19 claims
- 2259US10892360B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 12, 2021·0 cites·20 claims
- 2358US10748986B2Structure and formation method of semiconductor device with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·20 claims
- 2458US2024355817A1Structure and formation method of semiconductor device with capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2555US10964781B2High voltage resistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·20 claims
- 2654US10679987B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 2752US11862675B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 2852US10297661B2High voltage resistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·0 cites·20 claims
- 2950US10586705B2Fluorine doped non-volatile memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 10, 2020·0 cites·20 claims
- 3048US9997601B2Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 12, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →